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Learning-Assisted Write Latency Optimization for Mobile Storage

I/O activities of mobile storage are highly synchronous. Flash garbage collection activities in mobile storage introduce extra delay to write requests and negatively impact on user perceived-latency. Runtime write demand is subject to correlation between multiple parameters, such as network connecti...

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Main Authors: Tsai, Wei-Chu, Wu, Sung-Ming, Chang, Li-Pin
Format: Conference Proceeding
Language:English
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Wu, Sung-Ming
Chang, Li-Pin
description I/O activities of mobile storage are highly synchronous. Flash garbage collection activities in mobile storage introduce extra delay to write requests and negatively impact on user perceived-latency. Runtime write demand is subject to correlation between multiple parameters, such as network connectivity, GPS coordinates, and current time. We propose predicting write demand with a learning algorithm, XGBoost, and conducting background, rate-based garbage collection to optimize write latency without premature, excessive flash erasure. Our method reduced the 99-th percentile write latency by 56% compared to on-demand garbage collection and decreased flash erase count by 51% compared to unconditional background garbage collection.
doi_str_mv 10.1109/RTCSA.2019.8864577
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source IEEE Xplore All Conference Series
subjects Correlation
Global Positioning System
Mobile storage
NAND flash
Optimization
Prediction algorithms
Smart phones
smartphones
Training
Wireless fidelity
XG-Boost
title Learning-Assisted Write Latency Optimization for Mobile Storage
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