GaAs as a Bright Cryogenic Scintillator for the Detection of Low-Energy Electron Recoils From MeV/c2 Dark Matter

This article presents the measurements of the luminescence and scintillation under X-ray of undoped, Si-doped, and Si, B codoped gallium-arsenide (GaAs) samples at cryogenic temperature over a wide infrared (IR) region using Si and InGaAs photodetectors. The undoped GaAs has a narrow emission band a...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2019-11, Vol.66 (11), p.2333-2337
Main Authors: Vasiukov, S., Chiossi, F., Braggio, C., Carugno, G., Moretti, F., Bourret, E., Derenzo, S.
Format: Article
Language:English
Subjects:
Arsenides
Cryogenic temperature
Crystals
Dark matter
Gallium
Gallium arsenide
gallium-arsenide (GaAs)
Indium gallium arsenide
Indium gallium arsenides
inorganic scintillators
Luminescence
Photodiodes
radioluminescence
Scintillation counters
Scintillators
semiconductor scintillators
Silicon
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Summary:This article presents the measurements of the luminescence and scintillation under X-ray of undoped, Si-doped, and Si, B codoped gallium-arsenide (GaAs) samples at cryogenic temperature over a wide infrared (IR) region using Si and InGaAs photodetectors. The undoped GaAs has a narrow emission band at 838 nm (1.48 eV) and a low light output of about 2 ph/keV. The GaAs:Si has three broad luminescence bands at 830 nm (1.49 eV), 1070 nm (1.16 eV), and 1335 nm (0.93 eV) and a light output of about 67 ph/keV. GaAs:(Si, B) has four luminescence bands at 860 nm (1.44 eV), 930 nm (1.33 eV), 1070 nm (1.16 eV), and 1335 nm (0.93 eV) with a light yield of approximately 119 ph/keV. With advances in photodetection, GaAs promises to be a useful cryogenic scintillator for the detection of electron recoils from MeV/c 2 dark matter.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2019.2946725