NEGF simulations of stacked silicon nanosheet FETs for performance optimization

We present quantum transport simulation results of stacked silicon nanosheet (SiNS) nFETs. Our simulations are based on the non-equilibrium Green's function (NEGF) method which is capable of dealing with all major physical effects necessary for steady-state electron transport in the complex-sha...

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Bibliographic Details
Main Authors: Park, Hong-Hyun, Choi, Woosung, Pourghaderi, Mohammad Ali, Kim, Jongchol, Kwon, Uihui, Kim, Dae Sin
Format: Conference Proceeding
Language:English
Subjects:
Field effect transistors
Logic gates
Metals
non-equilibrium Green's function (NEGF)
Performance evaluation
quantum transport
Semiconductor process modeling
Silicon
Silicon compounds
stacked nanosheet FET
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Summary:We present quantum transport simulation results of stacked silicon nanosheet (SiNS) nFETs. Our simulations are based on the non-equilibrium Green's function (NEGF) method which is capable of dealing with all major physical effects necessary for steady-state electron transport in the complex-shaped devices. In order to help find optimal device design many split simulations for various geometry and process conditions were performed as a demonstration.
ISSN:1946-1577
DOI:10.1109/SISPAD.2019.8870365