OFF Current Suppression by Gate-gontrolled Strain in The N-type GaAs Piezoelectric FinFETs

The gate-controlled compressive strain induced by piezoelectric layers (piezo-layers) is used to suppress the OFF current of n-type GaAs piezoelectric FinFETs (Piezo-FinFETs). Quantum ballistic transport of n-type GaAs Piezo-FinFETs is modeled by the self-consistent Schrödinger-Poisson system. Our...

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Bibliographic Details
Main Authors: Long, Yuxiong, Huang, Jun Z., Wei, Zhongming, Luo, Jun-Wei, Jiang, Xiangwei
Format: Conference Proceeding
Language:English
Subjects:
FinFET
Piezoelectric
Steep slope
strain modulation
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Summary:The gate-controlled compressive strain induced by piezoelectric layers (piezo-layers) is used to suppress the OFF current of n-type GaAs piezoelectric FinFETs (Piezo-FinFETs). Quantum ballistic transport of n-type GaAs Piezo-FinFETs is modeled by the self-consistent Schrödinger-Poisson system. Our results suggest that n-type GaAs Piezo-FinFETs reduce OFF current by an order of magnitude for both high performance and low power applications compared with their counterparts without piezo-layers. The influences of device orientations on device performance is also investigated. The optimal device orientation of n-type GaAs Piezo-FinFETs is on the crystal surface (111).
ISSN:1946-1577
DOI:10.1109/SISPAD.2019.8870452