TCAD Framework to Estimate the NBTI Degradation in FinFET and GAA NSFET Under Mechanical Strain

A physics-based TCAD framework is used to estimate the interface trap generation (ΔN IT ) during Negative Bias Temperature Instability (NBTI) stress in P-channel FinFET and Gate All Around (GAA) Nano-Sheet (NS) FET. The impact of mechanical strain due to channel length scaling (L CH ) on ΔN IT gener...

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Bibliographic Details
Main Authors: Tiwari, Ravi, Parihar, Narendra, Thakor, Karansingh, Wong, Hiu-Yung, Mahapatra, Souvik
Format: Conference Proceeding
Language:English
Subjects:
FinFETs
GAA-NSFET
LCH scaling
mechanical strain
NBTI
Negative bias temperature instability
RD model
Semiconductor process modeling
Silicon germanium
Strain
Stress
Thermal variables control
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Description
Summary:A physics-based TCAD framework is used to estimate the interface trap generation (ΔN IT ) during Negative Bias Temperature Instability (NBTI) stress in P-channel FinFET and Gate All Around (GAA) Nano-Sheet (NS) FET. The impact of mechanical strain due to channel length scaling (L CH ) on ΔN IT generation is estimated. The band structure calculations are used to explain the impact of mechanical strain on ΔN IT generation.
ISSN:1946-1577
DOI:10.1109/SISPAD.2019.8870523