Thermal Piezoresistive Back Action Enhancement Using an Innovative Design of Silicon Nanobeam

Over the last few years, Thermal Piezoresistive Back Action (TPBA) in biased silicon nanobeams has demonstrated its potential to control the quality factor of resonant sensors and its ability to reach self-sustained oscillations regime. This paper reports an innovative beam geometry to improve TPBA...

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Main Authors: Janioud, Pierre, Koumela, Alexandra, Poulain, Christophe, Louwers, Stephan, Ladner, Carine, Morfouli, Panagiota, Jourdan, Guillaume
Format: Conference Proceeding
Language:English
Subjects:
Micromechanical devices
Oscillators
Resonant frequency
Silicon
Thermal factors
Thermal sensors
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creator Janioud, Pierre
Koumela, Alexandra
Poulain, Christophe
Louwers, Stephan
Ladner, Carine
Morfouli, Panagiota
Jourdan, Guillaume
description Over the last few years, Thermal Piezoresistive Back Action (TPBA) in biased silicon nanobeams has demonstrated its potential to control the quality factor of resonant sensors and its ability to reach self-sustained oscillations regime. This paper reports an innovative beam geometry to improve TPBA efficiency, which consists of a thermal plate embedded in a silicon nanobeam used to implement TPBA. The plate increases the thermal inertia of the beam and consequently its thermal time constant that directly enhances TPBA. As a result, the efficiency of TPBA is considerably enhanced and the DC-Current biasing threshold, required to reach self-sustained oscillations regime, is substantially reduced saving up to one order of magnitude on energy consumption. This kind of beam can supersede regular nanobeam in most nanobeam based devices to improve TPBA efficiency with negligible changes on their mechanical and electrical behaviors.
doi_str_mv 10.1109/MEMSYS.2019.8870870
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fullrecord <record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_8870870</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8870870</ieee_id><sourcerecordid>8870870</sourcerecordid><originalsourceid>FETCH-LOGICAL-i203t-fdc05a44faf770e8623590ae0cfb14dab1dd812c132e091d041b6f1c4987a26d3</originalsourceid><addsrcrecordid>eNotkEFPwkAUhFcTExH5BVz2DxTf2y7t7hERkQTUBDh4MOR1-wqrdGvahkR_vY0ymWQu881hhBgijBDB3q1mq_XbeqQA7ciYFDpfiBtMlUFMEPSl6ClMIEKbmGsxaJoP6GS1QoU98b45cF3SUb56_qlqbnzT-hPLe3KfcuJaXwU5CwcKjksOrdw2PuwlBbkIoTrRX_eho_ZBVoVc-6N3HfFMocqYyltxVdCx4cE5-2L7ONtMn6Lly3wxnSwjryBuoyJ3MCatCyrSFNgkKh5bIAZXZKhzyjDPDSqHsWKwmIPGLCnQaWtSUkke98Xwf9cz8-6r9iXV37vzG_EvBPdU1Q</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Thermal Piezoresistive Back Action Enhancement Using an Innovative Design of Silicon Nanobeam</title><source>IEEE Xplore All Conference Series</source><creator>Janioud, Pierre ; Koumela, Alexandra ; Poulain, Christophe ; Louwers, Stephan ; Ladner, Carine ; Morfouli, Panagiota ; Jourdan, Guillaume</creator><creatorcontrib>Janioud, Pierre ; Koumela, Alexandra ; Poulain, Christophe ; Louwers, Stephan ; Ladner, Carine ; Morfouli, Panagiota ; Jourdan, Guillaume</creatorcontrib><description>Over the last few years, Thermal Piezoresistive Back Action (TPBA) in biased silicon nanobeams has demonstrated its potential to control the quality factor of resonant sensors and its ability to reach self-sustained oscillations regime. This paper reports an innovative beam geometry to improve TPBA efficiency, which consists of a thermal plate embedded in a silicon nanobeam used to implement TPBA. The plate increases the thermal inertia of the beam and consequently its thermal time constant that directly enhances TPBA. As a result, the efficiency of TPBA is considerably enhanced and the DC-Current biasing threshold, required to reach self-sustained oscillations regime, is substantially reduced saving up to one order of magnitude on energy consumption. This kind of beam can supersede regular nanobeam in most nanobeam based devices to improve TPBA efficiency with negligible changes on their mechanical and electrical behaviors.</description><identifier>EISSN: 2160-1968</identifier><identifier>EISBN: 1728116104</identifier><identifier>EISBN: 9781728116105</identifier><identifier>DOI: 10.1109/MEMSYS.2019.8870870</identifier><language>eng</language><publisher>IEEE</publisher><subject>Micromechanical devices ; Oscillators ; Resonant frequency ; Silicon ; Thermal factors ; Thermal sensors</subject><ispartof>2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems (MEMS), 2019, p.157-160</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8870870$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,777,781,786,787,23911,23912,25121,27906,54536,54913</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8870870$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Janioud, Pierre</creatorcontrib><creatorcontrib>Koumela, Alexandra</creatorcontrib><creatorcontrib>Poulain, Christophe</creatorcontrib><creatorcontrib>Louwers, Stephan</creatorcontrib><creatorcontrib>Ladner, Carine</creatorcontrib><creatorcontrib>Morfouli, Panagiota</creatorcontrib><creatorcontrib>Jourdan, Guillaume</creatorcontrib><title>Thermal Piezoresistive Back Action Enhancement Using an Innovative Design of Silicon Nanobeam</title><title>2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems (MEMS)</title><addtitle>MEMSYS</addtitle><description>Over the last few years, Thermal Piezoresistive Back Action (TPBA) in biased silicon nanobeams has demonstrated its potential to control the quality factor of resonant sensors and its ability to reach self-sustained oscillations regime. This paper reports an innovative beam geometry to improve TPBA efficiency, which consists of a thermal plate embedded in a silicon nanobeam used to implement TPBA. The plate increases the thermal inertia of the beam and consequently its thermal time constant that directly enhances TPBA. As a result, the efficiency of TPBA is considerably enhanced and the DC-Current biasing threshold, required to reach self-sustained oscillations regime, is substantially reduced saving up to one order of magnitude on energy consumption. This kind of beam can supersede regular nanobeam in most nanobeam based devices to improve TPBA efficiency with negligible changes on their mechanical and electrical behaviors.</description><subject>Micromechanical devices</subject><subject>Oscillators</subject><subject>Resonant frequency</subject><subject>Silicon</subject><subject>Thermal factors</subject><subject>Thermal sensors</subject><issn>2160-1968</issn><isbn>1728116104</isbn><isbn>9781728116105</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2019</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotkEFPwkAUhFcTExH5BVz2DxTf2y7t7hERkQTUBDh4MOR1-wqrdGvahkR_vY0ymWQu881hhBgijBDB3q1mq_XbeqQA7ciYFDpfiBtMlUFMEPSl6ClMIEKbmGsxaJoP6GS1QoU98b45cF3SUb56_qlqbnzT-hPLe3KfcuJaXwU5CwcKjksOrdw2PuwlBbkIoTrRX_eho_ZBVoVc-6N3HfFMocqYyltxVdCx4cE5-2L7ONtMn6Lly3wxnSwjryBuoyJ3MCatCyrSFNgkKh5bIAZXZKhzyjDPDSqHsWKwmIPGLCnQaWtSUkke98Xwf9cz8-6r9iXV37vzG_EvBPdU1Q</recordid><startdate>201901</startdate><enddate>201901</enddate><creator>Janioud, Pierre</creator><creator>Koumela, Alexandra</creator><creator>Poulain, Christophe</creator><creator>Louwers, Stephan</creator><creator>Ladner, Carine</creator><creator>Morfouli, Panagiota</creator><creator>Jourdan, Guillaume</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201901</creationdate><title>Thermal Piezoresistive Back Action Enhancement Using an Innovative Design of Silicon Nanobeam</title><author>Janioud, Pierre ; Koumela, Alexandra ; Poulain, Christophe ; Louwers, Stephan ; Ladner, Carine ; Morfouli, Panagiota ; Jourdan, Guillaume</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i203t-fdc05a44faf770e8623590ae0cfb14dab1dd812c132e091d041b6f1c4987a26d3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Micromechanical devices</topic><topic>Oscillators</topic><topic>Resonant frequency</topic><topic>Silicon</topic><topic>Thermal factors</topic><topic>Thermal sensors</topic><toplevel>online_resources</toplevel><creatorcontrib>Janioud, Pierre</creatorcontrib><creatorcontrib>Koumela, Alexandra</creatorcontrib><creatorcontrib>Poulain, Christophe</creatorcontrib><creatorcontrib>Louwers, Stephan</creatorcontrib><creatorcontrib>Ladner, Carine</creatorcontrib><creatorcontrib>Morfouli, Panagiota</creatorcontrib><creatorcontrib>Jourdan, Guillaume</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Janioud, Pierre</au><au>Koumela, Alexandra</au><au>Poulain, Christophe</au><au>Louwers, Stephan</au><au>Ladner, Carine</au><au>Morfouli, Panagiota</au><au>Jourdan, Guillaume</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Thermal Piezoresistive Back Action Enhancement Using an Innovative Design of Silicon Nanobeam</atitle><btitle>2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems (MEMS)</btitle><stitle>MEMSYS</stitle><date>2019-01</date><risdate>2019</risdate><spage>157</spage><epage>160</epage><pages>157-160</pages><eissn>2160-1968</eissn><eisbn>1728116104</eisbn><eisbn>9781728116105</eisbn><abstract>Over the last few years, Thermal Piezoresistive Back Action (TPBA) in biased silicon nanobeams has demonstrated its potential to control the quality factor of resonant sensors and its ability to reach self-sustained oscillations regime. This paper reports an innovative beam geometry to improve TPBA efficiency, which consists of a thermal plate embedded in a silicon nanobeam used to implement TPBA. The plate increases the thermal inertia of the beam and consequently its thermal time constant that directly enhances TPBA. As a result, the efficiency of TPBA is considerably enhanced and the DC-Current biasing threshold, required to reach self-sustained oscillations regime, is substantially reduced saving up to one order of magnitude on energy consumption. This kind of beam can supersede regular nanobeam in most nanobeam based devices to improve TPBA efficiency with negligible changes on their mechanical and electrical behaviors.</abstract><pub>IEEE</pub><doi>10.1109/MEMSYS.2019.8870870</doi><tpages>4</tpages></addata></record>
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subjects Micromechanical devices
Oscillators
Resonant frequency
Silicon
Thermal factors
Thermal sensors
title Thermal Piezoresistive Back Action Enhancement Using an Innovative Design of Silicon Nanobeam
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-17T16%3A21%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Thermal%20Piezoresistive%20Back%20Action%20Enhancement%20Using%20an%20Innovative%20Design%20of%20Silicon%20Nanobeam&rft.btitle=2019%20IEEE%2032nd%20International%20Conference%20on%20Micro%20Electro%20Mechanical%20Systems%20(MEMS)&rft.au=Janioud,%20Pierre&rft.date=2019-01&rft.spage=157&rft.epage=160&rft.pages=157-160&rft.eissn=2160-1968&rft_id=info:doi/10.1109/MEMSYS.2019.8870870&rft.eisbn=1728116104&rft.eisbn_list=9781728116105&rft_dat=%3Cieee_CHZPO%3E8870870%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i203t-fdc05a44faf770e8623590ae0cfb14dab1dd812c132e091d041b6f1c4987a26d3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=8870870&rfr_iscdi=true