Nonuniformity study for silicon-based BIB terahertz detectors

Silicon-based blocked-impurity-band (BIB) array detector has been fabricated. The dark current densities versus anode bias with anode bias scanning from -4V to 4V for four different pixels on a single array chip have been measured in order to study the nonuniformity of terahertz array detector. It h...

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Bibliographic Details
Main Authors: Wang, Xiaodong, Chen, Yulu, Wang, Bingbing, Zhang, ChuanSheng, Zhang, Haoxing
Format: Conference Proceeding
Language:English
Subjects:
Anodes
Current measurement
Dark current
Density measurement
Detectors
Photonics
Semiconductor device measurement
Online Access:Request full text
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Description
Summary:Silicon-based blocked-impurity-band (BIB) array detector has been fabricated. The dark current densities versus anode bias with anode bias scanning from -4V to 4V for four different pixels on a single array chip have been measured in order to study the nonuniformity of terahertz array detector. It has been demonstrated that the minimum nonuniformity of 7.6% can be achieved for our fabricated Silicon-based BIB array detector.
ISSN:2162-2035
DOI:10.1109/IRMMW-THz.2019.8874321