Pulsed stress reliability investigations of schottky diodes and HBTS

Experimental results from stressing Schottky diodes and HBTs employing TLP (Transmission Line Pulses) with 100ns duration time and ESD pulses following the Human Body Model are compared. Based on optical and electrical characterisation the same failure mechanisms seem to occur indicating the strong...

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Bibliographic Details
Main Authors: Schubler, M., Krozew, V., Bock, K.H., Brandt, M., Vecci, L., Losi, R., Hartnagel, H.L.
Format: Conference Proceeding
Language:English
Subjects:
Biological system modeling
Current density
Electrostatic discharge
Heterojunction bipolar transistors
Optical pulses
Performance evaluation
Schottky diodes
Stress
Testing
Transmission lines
Online Access:Request full text
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Summary:Experimental results from stressing Schottky diodes and HBTs employing TLP (Transmission Line Pulses) with 100ns duration time and ESD pulses following the Human Body Model are compared. Based on optical and electrical characterisation the same failure mechanisms seem to occur indicating the strong degree of relationship between these two methods. Device failures are explained by thermally activated interface and bulk reactions, field enhanced material transport and hot charge carrier effects.
DOI:10.1109/ESREF.1996.888243