Comparison of Two Internal Miller Compensation Techniques for LDO Regulators

Internal frequency compensation is required to achieve stable operation of fully integrated Low Dropout (LDO) regulators without relying on an external μF capacitor at the output node. This paper evaluates the performance of two Miller-based frequency compensation strategies: current buffer LDO (CB-...

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Main Authors: Montalvo-Galicia, F., Diaz-Arango, G., Ventura-Arizmendi, C., Calvo, B., Sanz-Pascual, M.T.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
frequency compensation
fully integrated LDO
Logic gates
low dropout regulator
Power demand
Regulators
Time factors
Transistors
Voltage control
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creator Montalvo-Galicia, F.
Diaz-Arango, G.
Ventura-Arizmendi, C.
Calvo, B.
Sanz-Pascual, M.T.
description Internal frequency compensation is required to achieve stable operation of fully integrated Low Dropout (LDO) regulators without relying on an external μF capacitor at the output node. This paper evaluates the performance of two Miller-based frequency compensation strategies: current buffer LDO (CB-LDO) and Basic Miller LDO (BM-LDO), both using a two-stage LDO core. Parameters such as overshoot, undershoot, settling time, power consumption and dropout voltage are measured and compared for 1.8V regulated output LDOs, verifying the impact of the compensation technique on the time response of the regulators.
doi_str_mv 10.1109/ICEEE.2019.8884571
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subjects Capacitance
frequency compensation
fully integrated LDO
Logic gates
low dropout regulator
Power demand
Regulators
Time factors
Transistors
Voltage control
title Comparison of Two Internal Miller Compensation Techniques for LDO Regulators
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