High-Speed InGaAs/InAlAs SACM Avalanche Photodiodes with Robust Optical & Electrical Overload

We study the optical and electrical overload of high-speed InGaAs/InAlAs avalanche photodiodes for future PON OLT and ONU applications. We achieve robust optical overload at +4dBm with successful suppression of surface charge accumulation and multiplication-layer junction breakdown. Physical model o...

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Bibliographic Details
Main Authors: Huang, Jack Jia-Sheng, Chang, H. S., Jan, Yu-Heng, Ni, C. J., Chen, H. S., Chou, Emin
Format: Conference Proceeding
Language:English
Subjects:
Avalanche photodiodes
Optical network units
Optical pulses
Optical sensors
Optical transmitters
Passive optical networks
Stress
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Summary:We study the optical and electrical overload of high-speed InGaAs/InAlAs avalanche photodiodes for future PON OLT and ONU applications. We achieve robust optical overload at +4dBm with successful suppression of surface charge accumulation and multiplication-layer junction breakdown. Physical model of surface state charge accumulation under optical stress is also presented.
ISSN:2575-274X
DOI:10.1109/IPCon.2019.8908281