Loss Prediction of Medium Voltage Power Modules: Trade-offs between Accuracy and Complexity

Advances in high breakdown voltage SiC MOSFETs allows design of medium voltage power modules with simpler topologies, however, high dv/dt in addition to high di/dt makes parasitics of power modules more important to consider in loss estimations. Correct estimations can help prevent costly and time-c...

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Bibliographic Details
Main Authors: Jorgensen, Jannick Kjaer, Christensen, Nicklas, Dalal, Dipen Narendra, Bjorn Jorgensen, Asger, Zhao, Hongbo, Munk-Nielsen, Stig, Uhrenfeldt, Christian
Format: Conference Proceeding
Language:English
Subjects:
Data models
Estimation
Loss Estimation
Medium Voltage
MOSFET
Multichip modules
Q3D
Semiconductor device modeling
SiC MOSFET
Solid modeling
SPICE
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Summary:Advances in high breakdown voltage SiC MOSFETs allows design of medium voltage power modules with simpler topologies, however, high dv/dt in addition to high di/dt makes parasitics of power modules more important to consider in loss estimations. Correct estimations can help prevent costly and time-consuming problems in a design process. Data sheet values can be used directly for loss estimation, but more detailed approaches in using device-level SPICE model fitting and inclusion of power module parasitics will give a more detailed estimation and may be used to predict transient behavior at a cost of increased complexity. This paper will quantitatively compare the switching loss predictive capability of different approaches in the case study of a custom-built medium voltage power module for varying operating conditions. It is found that by including parasitics loss prediction error is reduced from 15-25% to a few percent at high DC-link voltage for the case-study chosen.
ISSN:2329-3748
DOI:10.1109/ECCE.2019.8913066