Simulation of the Heavy Charged Particle Impacts on Electrical Characteristics of N-MOSFET Device Structure

The paper presents the results of simulation of the impacts of a heavy charged particle with a value of linear energy transfer equal to 1.81 MeV·cm 2 /mg, 10.1 MeV·cm 2 /mg, 18.8 MeV·cm 2 /mg, 55.0 MeV·cm 2 /mg, corresponding to nitrogen ions 15 N +4 with energy E = 1.87 MeV, argon 40 Ar +12 with en...

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Bibliographic Details
Main Authors: Ha, Dao Dinh, Trung, Tran Tuan, Quang, Nguyen Trong, Lovshenko, Ivan, Khanko, Veranika, Stempitsky, Viktor
Format: Conference Proceeding
Language:English
Subjects:
Argon
device simulation
Ionizing radiation
linear energy transfer
MOSFET
Nitrogen
single event upset
Single event upsets
Temperature dependence
Xenon
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Summary:The paper presents the results of simulation of the impacts of a heavy charged particle with a value of linear energy transfer equal to 1.81 MeV·cm 2 /mg, 10.1 MeV·cm 2 /mg, 18.8 MeV·cm 2 /mg, 55.0 MeV·cm 2 /mg, corresponding to nitrogen ions 15 N +4 with energy E = 1.87 MeV, argon 40 Ar +12 with energy E = 372 MeV, ferrum 56 Fe +15 with energy E = 523 MeV, xenon 131 Xe +35 with energy E = 1217 MeV, on electrical characteristics of n-MOSFET device structure when there are variations in the motion trajectory and ambient temperature.
ISSN:2162-1039
DOI:10.1109/ATC.2019.8924508