Strained Germanium Lasing in the Mid-Infrared

Mid-Infrared lasing between 3.20 and 3.66 μm is achieved in undoped germanium microbridges strained up to 5.9 % and up to a temperature of 100 K under optical pulsed excitation of 100 ps, exploiting a non-equilibrium carrier dynamic.

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Bibliographic Details
Main Authors: Pilon, F. T. Armand, Chelnokov, A., Faist, J., Sigg, H., Lyasota, A., Niquet, Y. M., Reboud, V., Calvo, V., Pauc, N., Widiez, J., Bonzon, C., Hartmann, J. M.
Format: Conference Proceeding
Language:English
Subjects:
Lasers
Online Access:Request full text
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Description
Summary:Mid-Infrared lasing between 3.20 and 3.66 μm is achieved in undoped germanium microbridges strained up to 5.9 % and up to a temperature of 100 K under optical pulsed excitation of 100 ps, exploiting a non-equilibrium carrier dynamic.
ISSN:1949-209X
DOI:10.1109/GROUP4.2019.8925921