TID-Induced Breakdown Voltage Degradation in Uniform and Linear Variable Doping SOI p-LDMOSFETs

• Published in: IEEE transactions on nuclear science 2020-07, Vol.67 (7), p.1390-1394
• Main Authors: Shu, Lei, Zhao, Yuan-Fu, Galloway, Kenneth F., Wang, Liang, Zhao, Kai, Zhou, Xin, Liu, Chao-Ming, Cao, Wei-Yi, Sui, Cheng-Long, Chen, Wei-Ping, Xiao, Li-Yi, Wang, Tian-Qi
• Format: Article
• Language: English
• Subjects: Breakdown; BVDS; CAD; Computer aided design; Computer simulation; Degradation; Doping; Doping profiles; Electric fields; Electric potential; Field effect transistors; ionizing radiation; linear variable doping (LVD); Metal oxide semiconductors; MOS devices; MOSFETs; power devices; Radiation effects; Semiconductor device measurement; Semiconductor devices; Semiconductor process modeling; silicon-on-insulator (SOI) p-channel laterally diffused metal oxide semiconductor field effect transistors (p-LDMOSFETs); SOI (semiconductors); technology computer aided design (TCAD) simulations; total ionizing dose (TID); uniform doping (UD); Voltage
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2019.2958292

The breakdown voltage (BV DS ) of uniform doping (UD) and linear variable doping (LVD) silicon-on-insulator (SOI) p-channel laterally diffused metal oxide semiconductor field effect transistors (p-LDMOSFETs) is examined after exposure to the total ionizing dose (TID). The results show BV DS degradation with accumulated dose. TID degradation with the MOS device biased off is more severe than that with the MOS device biased on. Also, LVD BV DS is more significant than UD BV DS at a given TID. Technology computer-aided design (TCAD) simulation is used to gain an insight into the mechanism causing BV DS degradation.