Linearity and low-noise performance of SOIMOSFETs for RF applications

Recently, CMOS has been actively developed for RF applications in the low-GHz range. Full integration of the RF active and passive components in bulk-Si however, requires special processing, like triple well and deep trenches to control the cross-talk interaction, substrate noise and Q-factor degrad...

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Bibliographic Details
Main Authors: Adan, A.O., Shitara, S., Tanba, N., Fukumi, M., Yoshimasu, T.
Format: Conference Proceeding
Language:English
Subjects:
Active inductors
Active noise reduction
Crosstalk
Degradation
L-band
Linearity
Noise figure
Noise measurement
Q factor
Radio frequency
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Summary:Recently, CMOS has been actively developed for RF applications in the low-GHz range. Full integration of the RF active and passive components in bulk-Si however, requires special processing, like triple well and deep trenches to control the cross-talk interaction, substrate noise and Q-factor degradation of on-chip inductors (Erzgraber et al., 1998). This paper describes the integration and performance of RF transistors and passive components in a FD-SOI process which work in the L-band for portable wireless applications. In this work, we show that by using high-resistivity substrates, simple integration can be achieved. Our analysis of RF devices indicates that RF noise figure (NF) and linearity (IP3) are critical parameters affected by the substrate, the Q-factor of passive elements, and "kink" in the transistor I/sub d/-V/sub ds/ characteristic.
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.2000.892754