Temperature Rise Prediction of Conductor and Enclosure in a GIS Component Considering Contact Resistance

• Main Authors: Ko, Jeong Ahn, Lee, Seungbo, Ryu, Gwang Hyeon, Boong Jeong, Seung
• Format: Conference Proceeding
• Language: English
• Subjects: Conductors; Current measurement; Loss measurement; Mathematical model; Solid modeling; Temperature distribution; Temperature measurement
• ISSN: 2643-9816
• DOI: 10.1109/ICEPE-ST.2019.8928763

GIS component such as GIB or E/DS should carry high current permanently. The high current creates high electric power losses in the current carrying parts. The heat from the losses increases the temperature of the current carrying parts. Excessive temperature rise will result in failure of GIS function. The temperature rise on the current carrying parts should not exceed a maximum limit which is defined by standards. Therefore, temperature prediction is important to prevent failure of GIS function. In this work, we improve the accuracy of temperature prediction by measuring the contact resistance between parts and applying it to the prediction. Ohmic power loss dependent on temperature rise is calculated, and these are used as input data for multi-physics analysis in order to predict the temperature rise. A heat transfer coefficient is applied only at the outermost boundary between GIS component and the atmosphere in order to reduce the analysis region. To verify the validity of the results, the predicted temperature rises in GIS components were compared with the experimental values.