Loading…
Low voltage protection circuit for FeRAM macro
A 256 Kb ITIC FeRAM with sol-gel SBT provides wide operation of supply voltages ranging from 2.7 V to 5.5 V without a word-line boost scheme, and is composed of a novel power-on/off protection circuit with synchronized operation method to /CE pulse during the unintentional power-on/off.
Saved in:
Main Authors: | , , , , , , |
---|---|
Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | |
---|---|
cites | |
container_end_page | 358 |
container_issue | |
container_start_page | 355 |
container_title | |
container_volume | |
creator | Hee-Bok Kang Hun-Woo Kye Duck-Ju Kim Je-Hoon Park Soo-Nam Jang Ji-Hwan Ryu Jin-Yong Chung |
description | A 256 Kb ITIC FeRAM with sol-gel SBT provides wide operation of supply voltages ranging from 2.7 V to 5.5 V without a word-line boost scheme, and is composed of a novel power-on/off protection circuit with synchronized operation method to /CE pulse during the unintentional power-on/off. |
doi_str_mv | 10.1109/APASIC.2000.896982 |
format | conference_proceeding |
fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_896982</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>896982</ieee_id><sourcerecordid>896982</sourcerecordid><originalsourceid>FETCH-LOGICAL-i104t-aa318cbe001bcc7f387c12bda045d3d905205f6d9982ca585e8297826b30fbad3</originalsourceid><addsrcrecordid>eNotj9tKAzEYhAMiKHVfoFd5gV3_JJvT5bJYLWxRPFyXHCXSmpKNim_vQoWBuRiY-QahNYGOENC3w9Pwsh07CgCd0kIreoEaLRUsYqKXIK9QM88fSw497wUX16ib8g_-zodq3gM-lVyDqyl_YpeK-0oVx1zwJjwPO3w0ruQbdBnNYQ7Nv6_Q2-budXxop8f77ThMbSLQ19YYRpSzAYBY52RkSjpCrTfLrmdeA6fAo_B6YXSGKx4UXUCpsAyiNZ6t0Prcm0II-1NJR1N-9-dT7A-sTUGB</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Low voltage protection circuit for FeRAM macro</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Hee-Bok Kang ; Hun-Woo Kye ; Duck-Ju Kim ; Je-Hoon Park ; Soo-Nam Jang ; Ji-Hwan Ryu ; Jin-Yong Chung</creator><creatorcontrib>Hee-Bok Kang ; Hun-Woo Kye ; Duck-Ju Kim ; Je-Hoon Park ; Soo-Nam Jang ; Ji-Hwan Ryu ; Jin-Yong Chung</creatorcontrib><description>A 256 Kb ITIC FeRAM with sol-gel SBT provides wide operation of supply voltages ranging from 2.7 V to 5.5 V without a word-line boost scheme, and is composed of a novel power-on/off protection circuit with synchronized operation method to /CE pulse during the unintentional power-on/off.</description><identifier>ISBN: 9780780364707</identifier><identifier>ISBN: 0780364708</identifier><identifier>DOI: 10.1109/APASIC.2000.896982</identifier><language>eng</language><publisher>IEEE</publisher><subject>Capacitors ; Ferroelectric films ; Ferroelectric materials ; Low voltage ; Nonvolatile memory ; Power supplies ; Protection ; Pulse circuits ; Random access memory ; Voltage control</subject><ispartof>Proceedings of Second IEEE Asia Pacific Conference on ASICs. AP-ASIC 2000 (Cat. No.00EX434), 2000, p.355-358</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/896982$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/896982$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Hee-Bok Kang</creatorcontrib><creatorcontrib>Hun-Woo Kye</creatorcontrib><creatorcontrib>Duck-Ju Kim</creatorcontrib><creatorcontrib>Je-Hoon Park</creatorcontrib><creatorcontrib>Soo-Nam Jang</creatorcontrib><creatorcontrib>Ji-Hwan Ryu</creatorcontrib><creatorcontrib>Jin-Yong Chung</creatorcontrib><title>Low voltage protection circuit for FeRAM macro</title><title>Proceedings of Second IEEE Asia Pacific Conference on ASICs. AP-ASIC 2000 (Cat. No.00EX434)</title><addtitle>APASIC</addtitle><description>A 256 Kb ITIC FeRAM with sol-gel SBT provides wide operation of supply voltages ranging from 2.7 V to 5.5 V without a word-line boost scheme, and is composed of a novel power-on/off protection circuit with synchronized operation method to /CE pulse during the unintentional power-on/off.</description><subject>Capacitors</subject><subject>Ferroelectric films</subject><subject>Ferroelectric materials</subject><subject>Low voltage</subject><subject>Nonvolatile memory</subject><subject>Power supplies</subject><subject>Protection</subject><subject>Pulse circuits</subject><subject>Random access memory</subject><subject>Voltage control</subject><isbn>9780780364707</isbn><isbn>0780364708</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2000</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotj9tKAzEYhAMiKHVfoFd5gV3_JJvT5bJYLWxRPFyXHCXSmpKNim_vQoWBuRiY-QahNYGOENC3w9Pwsh07CgCd0kIreoEaLRUsYqKXIK9QM88fSw497wUX16ib8g_-zodq3gM-lVyDqyl_YpeK-0oVx1zwJjwPO3w0ruQbdBnNYQ7Nv6_Q2-budXxop8f77ThMbSLQ19YYRpSzAYBY52RkSjpCrTfLrmdeA6fAo_B6YXSGKx4UXUCpsAyiNZ6t0Prcm0II-1NJR1N-9-dT7A-sTUGB</recordid><startdate>2000</startdate><enddate>2000</enddate><creator>Hee-Bok Kang</creator><creator>Hun-Woo Kye</creator><creator>Duck-Ju Kim</creator><creator>Je-Hoon Park</creator><creator>Soo-Nam Jang</creator><creator>Ji-Hwan Ryu</creator><creator>Jin-Yong Chung</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2000</creationdate><title>Low voltage protection circuit for FeRAM macro</title><author>Hee-Bok Kang ; Hun-Woo Kye ; Duck-Ju Kim ; Je-Hoon Park ; Soo-Nam Jang ; Ji-Hwan Ryu ; Jin-Yong Chung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-aa318cbe001bcc7f387c12bda045d3d905205f6d9982ca585e8297826b30fbad3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Capacitors</topic><topic>Ferroelectric films</topic><topic>Ferroelectric materials</topic><topic>Low voltage</topic><topic>Nonvolatile memory</topic><topic>Power supplies</topic><topic>Protection</topic><topic>Pulse circuits</topic><topic>Random access memory</topic><topic>Voltage control</topic><toplevel>online_resources</toplevel><creatorcontrib>Hee-Bok Kang</creatorcontrib><creatorcontrib>Hun-Woo Kye</creatorcontrib><creatorcontrib>Duck-Ju Kim</creatorcontrib><creatorcontrib>Je-Hoon Park</creatorcontrib><creatorcontrib>Soo-Nam Jang</creatorcontrib><creatorcontrib>Ji-Hwan Ryu</creatorcontrib><creatorcontrib>Jin-Yong Chung</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore (Online service)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hee-Bok Kang</au><au>Hun-Woo Kye</au><au>Duck-Ju Kim</au><au>Je-Hoon Park</au><au>Soo-Nam Jang</au><au>Ji-Hwan Ryu</au><au>Jin-Yong Chung</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Low voltage protection circuit for FeRAM macro</atitle><btitle>Proceedings of Second IEEE Asia Pacific Conference on ASICs. AP-ASIC 2000 (Cat. No.00EX434)</btitle><stitle>APASIC</stitle><date>2000</date><risdate>2000</risdate><spage>355</spage><epage>358</epage><pages>355-358</pages><isbn>9780780364707</isbn><isbn>0780364708</isbn><abstract>A 256 Kb ITIC FeRAM with sol-gel SBT provides wide operation of supply voltages ranging from 2.7 V to 5.5 V without a word-line boost scheme, and is composed of a novel power-on/off protection circuit with synchronized operation method to /CE pulse during the unintentional power-on/off.</abstract><pub>IEEE</pub><doi>10.1109/APASIC.2000.896982</doi><tpages>4</tpages></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | ISBN: 9780780364707 |
ispartof | Proceedings of Second IEEE Asia Pacific Conference on ASICs. AP-ASIC 2000 (Cat. No.00EX434), 2000, p.355-358 |
issn | |
language | eng |
recordid | cdi_ieee_primary_896982 |
source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Capacitors Ferroelectric films Ferroelectric materials Low voltage Nonvolatile memory Power supplies Protection Pulse circuits Random access memory Voltage control |
title | Low voltage protection circuit for FeRAM macro |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T18%3A21%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Low%20voltage%20protection%20circuit%20for%20FeRAM%20macro&rft.btitle=Proceedings%20of%20Second%20IEEE%20Asia%20Pacific%20Conference%20on%20ASICs.%20AP-ASIC%202000%20(Cat.%20No.00EX434)&rft.au=Hee-Bok%20Kang&rft.date=2000&rft.spage=355&rft.epage=358&rft.pages=355-358&rft.isbn=9780780364707&rft.isbn_list=0780364708&rft_id=info:doi/10.1109/APASIC.2000.896982&rft_dat=%3Cieee_6IE%3E896982%3C/ieee_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i104t-aa318cbe001bcc7f387c12bda045d3d905205f6d9982ca585e8297826b30fbad3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=896982&rfr_iscdi=true |