A Optimized PPD CMOS Pixel with 26.09 % Transfer Efficiency Improvement and 43.34 % Crosstalk Suppression for I-ToF Application

The Pinned-Photodiode (PPD) pixel design for indirect Time-of-Flight (ToF) systems has been optimized by optimum doping profile in the transfer tunnel and deep trench isolation in this paper. The pixel is elaborated based on the TCAD process. In simulate the proposed pixel design, its performance of...

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Bibliographic Details
Main Authors: Yang, Junwei, Shi, Weiwei, Huang, Zhiyu, Xu, Yuan, Zheng, Yanghao, Fang, Xuanbin
Format: Conference Proceeding
Language:English
Subjects:
CMOS image sensor
distance measure
Pinned Photodiode
time-of-flight
ToF
Online Access:Request full text
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Summary:The Pinned-Photodiode (PPD) pixel design for indirect Time-of-Flight (ToF) systems has been optimized by optimum doping profile in the transfer tunnel and deep trench isolation in this paper. The pixel is elaborated based on the TCAD process. In simulate the proposed pixel design, its performance of demodulation contrasts have improved 26.09% at the working frequency of 40 MHz with 850 nm incident light. Also, the number of crosstalk electrons has been suppressed by 43.34% by giving 4 um trench isolation in the proposed pixel design.
ISSN:2162-755X
DOI:10.1109/ASICON47005.2019.8983466