A 0.8 µm Smart Dual Conversion Gain Pixel for 64 Megapixels CMOS Image Sensor with 12k e- Full-Well Capacitance and Low Dark Noise

A 0.8 μm-pitch 64 megapixels ultrahigh-resolution CMOS image sensor has been demonstrated for mobile applications for the first time. Full-well capacity (FWC) of 6k e- was achieved in 0.8 μm pixels as the best in the world, and the advanced color filter (CF) isolation technology was introduced to ov...

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Main Authors: Park, Donghyuk, Joo, Woong, Lee, Yunki, Nah, Seungjoo, Jeong, Heegeun, Kim, Bumsuk, Jung, Sangil, Lee, Jesuk, Kim, Yitae, Moon, Chang-Rok, Park, Yongin, Lee, Seung-Wook, Han, Jinhwa, Jang, Dongyoung, Kwon, Heesang, Cha, Seungwon, Kim, Mihye, Lee, Haewon, Suh, Sungho
Format: Conference Proceeding
Language:English
Online Access:Request full text
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Summary:A 0.8 μm-pitch 64 megapixels ultrahigh-resolution CMOS image sensor has been demonstrated for mobile applications for the first time. Full-well capacity (FWC) of 6k e- was achieved in 0.8 μm pixels as the best in the world, and the advanced color filter (CF) isolation technology was introduced to overcome sensitivity degradation. Dual conversion gain (CG) technology was also first applied to mobile applications to improve the FWC performance of Tetracell up to 12k e-. In addition, highly refined deep trench isolation (DTI) and photodiode design significantly improved dark noise characteristics.
ISSN:2156-017X
DOI:10.1109/IEDM19573.2019.8993487