Composition Optimization and Device Understanding of Si-Ge-As-Te Ovonic Threshold Switch Selector with Excellent Endurance

In this work we explore the composition space of the Ovonic Threshold Switch (OTS) selector device based on Si-Ge-As-Te material system. Physical Vapor Deposition (PVD) co-sputtering capabilities enabled the tuning of the As/Te ratio, Ge and Si content to increase the crystallization temperature TX&...

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Bibliographic Details
Main Authors: Garbin, D., Devulder, W., Degraeve, R., Donadio, G. L., Clima, S., Opsomer, K., Fantini, A., Cellier, D., Kim, W. G., Pakala, M., Cockburn, A., Detavernier, C., Delhougne, R., Goux, L., Kar, G. S.
Format: Conference Proceeding
Language:English
Subjects:
Crystallization
Current measurement
Germanium
Silicon
Stability analysis
Switches
Thermal stability
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Summary:In this work we explore the composition space of the Ovonic Threshold Switch (OTS) selector device based on Si-Ge-As-Te material system. Physical Vapor Deposition (PVD) co-sputtering capabilities enabled the tuning of the As/Te ratio, Ge and Si content to increase the crystallization temperature TX>450°C. Guided by ab initio calculations, we optimize the composition and achieve stable endurance characteristics of more than 10 11 cycles on 65nm devices fabricated on 300mm wafers. Finally, we propose a switching model that can predict the statistical distribution of the threshold voltage (VTH), explaining V TH drift and time-dependent instabilities.
ISSN:2156-017X
DOI:10.1109/IEDM19573.2019.8993547