Deep Submicron III-N HEMTs - Technological Development and Reliability

This paper gives the state-of-the-art (SOA) of the technological development and the reliability status of deep-submicron Gallium Nitride (GaN) high-electron mobility transistors (HEMTs) with gate lengths of 100 nm or below. Several process technologies are discussed and epitaxial, process options,...

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Bibliographic Details
Main Authors: Quay, R., Dammann, M., Kemmer, T., Bruckner, P., Cwiklinski, M., Schwantuschke, D., Krause, S., Leone, S., Mikulla, M.
Format: Conference Proceeding
Language:English
Online Access:Request full text
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Summary:This paper gives the state-of-the-art (SOA) of the technological development and the reliability status of deep-submicron Gallium Nitride (GaN) high-electron mobility transistors (HEMTs) with gate lengths of 100 nm or below. Several process technologies are discussed and epitaxial, process options, and reliability are compared. Promising GaN MMIC device results are also provided leading to improved GaN G-band operation at frequencies near 200 GHz.
ISSN:2156-017X
DOI:10.1109/IEDM19573.2019.8993554