Metal-Assisted Solid-Phase Crystallization Process for Vertical Monocrystalline Si Channel in 3D Flash Memory

In order to improve the channel conductance of 3D flash memory cell, metal-assisted solid-phase single crystallization process has been demonstrated for the first time. Metal induced lateral crystallization (MILC) process is well-known for the thin film transistors (TFTs).We tried to apply this tech...

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Main Authors: Miyagawa, Hidenori, Fujiwara, Makoto, Mitani, Yuichiro, Obu, Tomoyuki, Aochi, Hideaki, Kusai, Haruka, Takaishi, Riichiro, Kawai, Tomoya, Kamimuta, Yuuichi, Murakami, Toshiya, Ariyoshi, Keiko, Asano, Takanori, Goto, Masakazu
Format: Conference Proceeding
Language:English
Online Access:Request full text
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Summary:In order to improve the channel conductance of 3D flash memory cell, metal-assisted solid-phase single crystallization process has been demonstrated for the first time. Metal induced lateral crystallization (MILC) process is well-known for the thin film transistors (TFTs).We tried to apply this technology to channel Si in a vertical memory holes of 3D flash memory. Monocrystalline growth was confirmed by in- situ TEM and nano-beam diffraction (NBD) analysis. Moreover, it shows superior device characteristics (Icell, Vth, sub-threshold slope, transconductance) and those uniformities with maintaining memory performance and reliability.
ISSN:2156-017X
DOI:10.1109/IEDM19573.2019.8993556