Hot Carrier Degradation-Induced Dynamic Variability in FinFETs: Experiments and Modeling

In this article, the dynamic variability induced by hot carrier degradation (HCD) in FinFETs is studied with decomposing the variation contributions of multiple types of traps. The nonlinear relationship of μ - σ²(Δ Vth) are newly observed in both n- and p-type FinFETs. A multitrap-based HCD variati...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2020-04, Vol.67 (4), p.1-6
Main Authors: Yu, Zhuoqing, Sun, Zixuan, Wang, Runsheng, Zhang, Jiayang, Huang, Ru
Format: Article
Language:English
Subjects:
Circuit design
Circuit reliability
Computer simulation
Degradation
FinFET
FinFETs
hot carrier
Hot carriers
Integrated circuit modeling
Integrated circuit reliability
reliability
Static random access memory
static random-access memory (SRAM)
Stress
Stress measurement
Variability
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Summary:In this article, the dynamic variability induced by hot carrier degradation (HCD) in FinFETs is studied with decomposing the variation contributions of multiple types of traps. The nonlinear relationship of μ - σ²(Δ Vth) are newly observed in both n- and p-type FinFETs. A multitrap-based HCD variation model is proposed and verified in FinFETs. The impacts of HCD variations on the static random-access memory (SRAM) read/write stability are also demonstrated with the circuit simulation. The results are beneficial for the reliability-aware circuit design against HCD variability particularly for FinFET-based circuits.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2020.2974864