A Novel 5-GHz SPDT Switch Using Semiconductor Distributed Doped Areas

This letter presents a novel 5-GHz transmitter/ receiver (TX/RX) single-pole double-throw (SPDT) switch designed on a silicon substrate. The novelty of this SPDT switch is the possibility it offers to simultaneously design the transmission lines and the active elements, without packaging and consequ...

Full description

Saved in:
Bibliographic Details
Published in:IEEE microwave and wireless components letters 2020-04, Vol.30 (4), p.421-424
Main Authors: Allanic, Rozenn, Le Berre, Denis, Quendo, Cedric, Chouteau, David, Grimal, Virginie, Valente, Damien, Billoue, Jerome
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This letter presents a novel 5-GHz transmitter/ receiver (TX/RX) single-pole double-throw (SPDT) switch designed on a silicon substrate. The novelty of this SPDT switch is the possibility it offers to simultaneously design the transmission lines and the active elements, without packaging and consequently its parasitic effects and frequency limitations. The device is intended to be easily integrated into a system with a more complex function, e.g., with amplifiers and antennas. The codesign method offers great flexibility in the positioning and sizing of the active elements, i.e., semiconductor distributed doped areas (ScDDAs), which are integrated n + pp + junctions, in order to obtain the best possible performances in both aspects. A demonstrator provides proof of the concept. In RX-mode, the insertion loss (IL) is 0.9 dB with isolation (ISO) higher than 30 dB. In TX-mode, IL is 2.38 dB and ISO is higher than 43 dB.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2020.2978644