Photoresistive Characteristics of Vertically-Aligned CNT Array

In this work we studied effect of photoresistive sensibility of multiwalled carbon nanotubes (MWCNT), direct grown on the silicon substrate by PECVD method. It was found out that this structures is sensitive for illumination in near-IR and visible spectra (from 350 nm). Authors associate this photor...

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Bibliographic Details
Main Authors: Ryazanov, Roman M., Kitsyuk, Evgeny P., Shamanaev, Artemiy A., Fedorova, Yulia O.
Format: Conference Proceeding
Language:English
Subjects:
carbon nanotubes
photodetector
photoresistor
visible range
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Summary:In this work we studied effect of photoresistive sensibility of multiwalled carbon nanotubes (MWCNT), direct grown on the silicon substrate by PECVD method. It was found out that this structures is sensitive for illumination in near-IR and visible spectra (from 350 nm). Authors associate this photoresponce with generation of free carriers in conduction band of CNT array electronic band structure.
ISSN:2376-6565
DOI:10.1109/EIConRus49466.2020.9039177