Modeling of Near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO2 MOSFETs

Near zero-field magnetoresistance (NZFMR) spectroscopy has the potential to provide chemical and physical information on radiation damage in 3-D integrated circuits. Electrically detected magnetic resonance (EDMR) has provided chemical and physical information for several decades but is limited in a...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2020-07, Vol.67 (7), p.1669-1673
Main Authors: Harmon, Nicholas J., Mcmillan, Stephen R., Ashton, James P., Lenahan, Patrick M., Flatte, Michael E.
Format: Article
Language:English
Subjects:
Conduction
Electrically detected magnetic resonance (EDMR)
Electromagnetic fields
Field effect transistors
Integrated circuits
Lead
Liouville equations
Magnetic fields
Magnetic resonance
Magnetoresistance
Magnetoresistivity
metal-oxide-semiconductor field-effect transistors (MOSFETs)
MOSFET
MOSFETs
Radiation
Radiation damage
Radiative recombination
Recombination
Resonance
Semiconductor devices
Silicon dioxide
Spectroscopy
Stochasticity
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Summary:Near zero-field magnetoresistance (NZFMR) spectroscopy has the potential to provide chemical and physical information on radiation damage in 3-D integrated circuits. Electrically detected magnetic resonance (EDMR) has provided chemical and physical information for several decades but is limited in applicability due to the need for an RF electromagnetic field. We model NZFMR and EDMR in Si/SiO 2 metal-oxide-semiconductor field-effect transistors (MOSFETs) by including spin-dependent recombination and hyperfine interactions in stochastic Liouville equations. We find that to accurately describe both NZFMR and EDMR, both the defect spin and conduction spin has to interact with a bath of nuclear spins, which are assumed to be composed of combinations of 29 Si and hydrogen.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2020.2981495