Eco-Friendly, Low-temperature Solution-processed InO/ A1oThin-film Transistor with Li - incorporation

In this work, we investigate an eco-friendly route of fabricating solution-processed thin-film transistors (TFTs). With Li incorporation in the indium oxide (InO) semiconductor layer, the annealing temperature can be lowered to 200°C. The combination with a solution processed high-k aluminum oxide (...

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Bibliographic Details
Main Authors: Zhao, T S, Zhao, C, Zhao, C Z, Xu, W Y, Yang, L, Mitrovic, I Z, Hall, S, Lim, E G, Yu, S C
Format: Conference Proceeding
Language:English
Subjects:
component
InO
Li incorporation
solution process
TFT
Online Access:Request full text
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Summary:In this work, we investigate an eco-friendly route of fabricating solution-processed thin-film transistors (TFTs). With Li incorporation in the indium oxide (InO) semiconductor layer, the annealing temperature can be lowered to 200°C. The combination with a solution processed high-k aluminum oxide (A1O) dielectric layer, produces a TFT field effect mobility with average value of 20.5 cm 2 ·V −1 ·s −1 from 30 samples, which is a promising result for future applications.
ISSN:2472-9132
DOI:10.1109/EUROSOI-ULIS45800.2019.9041879