Vertical Heterojunction Ge0.92Sn0.08/Ge Gate-All-Around Nanowire pMOSFETs

Vertical heterojunction Ge 0.92 Sn 0.08 /Ge gate-all-around (GAA) nanowire pMOSFETs fabricated with a top-down approach are reported. With optimized processes, pFETs with nanowire diameters as small as 40 nm were achieved and a decent I ON /I oFF ratio of ~4×10 4 was obtained due to the GAA nanowire...

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Bibliographic Details
Main Authors: Liu, Mingshan, Mertens, Konstantin, Von Den Driesch, Nils, Grap, Thomas, Trellenkamp, Stefan, Hartmann, Jean-Michel, Knoch, Joachim, Buca, Dan, Zhao, Qing-Tai
Format: Conference Proceeding
Language:English
Subjects:
GAA
GeSn/Ge
pFETs
top-down
vertical nanowire
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Summary:Vertical heterojunction Ge 0.92 Sn 0.08 /Ge gate-all-around (GAA) nanowire pMOSFETs fabricated with a top-down approach are reported. With optimized processes, pFETs with nanowire diameters as small as 40 nm were achieved and a decent I ON /I oFF ratio of ~4×10 4 was obtained due to the GAA nanowire geometry and the GeSn/Ge heterostructure. Devices with larger nanowire diameters exhibited higher I ON , I ON /I OFF ratio and transconductance. Similar subthreshold swing (SS) characteristics were present in pFETs with various nanowire diameters considering the compensating effect between top source resistance and gate electrostatics induced by nanowire diameter.
ISSN:2472-9132
DOI:10.1109/EUROSOI-ULIS45800.2019.9041910