COM2 SiGe modular BiCMOS technology for digital, mixed-signal, and RF applications

The COM2 SiGe modular BiCMOS technology has been developed to allow efficient design and manufacturing of digital, mixed-signal, and RF integrated circuits, as well as enabling system-on-chip (SOC) integration. The technology is based on the 0.16 /spl mu/m COM2 digital CMOS process which features 1....

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Main Authors: Carroll, M., Ivanov, T., Kuehne, S., Chu, J., King, C., Frei, M., Mastrapasqua, M., Johnson, R., Ng, K., Moinian, S., Martin, S., Huang, C., Hsu, T., Nguyen, D., Singh, R., Fritzinger, L., Esry, T., Moller, W., Kane, B., Abeln, G., Hwang, D., Orphee, D., Lytle, S., Roby, M., Vitkavage, D., Chesire, D., Ashton, R., Shuttleworth, D., Thoma, M., Choi, S., Lewllen, S., Mason, P., Lai, T., Hsieh, H., Dennis, D., Harris, E., Thomas, S., Gregor, R., Sana, P., Wu, W.
Format: Conference Proceeding
Language:English
Subjects:
BiCMOS integrated circuits
CMOS technology
Digital integrated circuits
Germanium silicon alloys
Integrated circuit manufacture
Integrated circuit technology
Radio frequency
Radiofrequency integrated circuits
Silicon germanium
System-on-a-chip
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Summary:The COM2 SiGe modular BiCMOS technology has been developed to allow efficient design and manufacturing of digital, mixed-signal, and RF integrated circuits, as well as enabling system-on-chip (SOC) integration. The technology is based on the 0.16 /spl mu/m COM2 digital CMOS process which features 1.5 V NMOS and PMOS transistors with 2.4 nm gate oxide, 0.135 /spl mu/m gate length, and up to 7 metal levels. Technology enhancement modules including dense SRAM, SiGe NPN bipolar transistor, and a variety of passive components have been developed to allow the COM2 technology to be cost-effectively optimized for a wide range of applications.
DOI:10.1109/IEDM.2000.904279