A novel SiGe-inserted SOI structure for high performance PDSOI CMOSFETs

A novel partially-depleted silicon-on-insulator (PDSOI) CMOSFETs with SiGe-inserted layer have been proposed. The SiGe-inserted layer in NMOS successively suppresses the floating body effects (FBE) by lowering the body-to-source potential barrier to hole current. It also provides a good current perf...

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Bibliographic Details
Main Authors: Bae, G.J., Choe, T.H., Kim, S.S., Rhee, H.S., Lee, K.W., Lee, N.I., Kim, K.D., Park, Y.K., Kang, H.S., Kim, Y.W., Fujihara, K., Kang, H.K., Moon, J.T.
Format: Conference Proceeding
Language:English
Subjects:
CMOS process
CMOS technology
CMOSFETs
Germanium silicon alloys
Ion implantation
MOS devices
MOSFETs
Silicon germanium
Silicon on insulator technology
Substrates
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Summary:A novel partially-depleted silicon-on-insulator (PDSOI) CMOSFETs with SiGe-inserted layer have been proposed. The SiGe-inserted layer in NMOS successively suppresses the floating body effects (FBE) by lowering the body-to-source potential barrier to hole current. It also provides a good current performance in PMOS by inducing the change of channel dopant distribution and increasing the efficiency of pocket ion implantation. Consequently, SiGe-inserted SOI devices achieve higher drain-to-source breakdown voltage in NMOS due to the suppression of FBE and increase drive currents of both NMOS and PMOS by 10% and 15%, respectively, compared to conventional PDSOI devices.
DOI:10.1109/IEDM.2000.904407