10W Class High Power C-Band Rectifier Using GaN HEMT

This paper demonstrates fundamental evaluation results of a C-band rectifier using gallium nitride (GaN) high electron mobility transistor (HEMT). To achieve rectification at high power range, the GaN HEMT is utilized. TGF2023-2-05 of Qorvo is used for the HEMT. A rectifier circuit is designed on a...

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Bibliographic Details
Main Authors: Yoshida, Satoshi, Nishikawa, Kenjiro, Kawasaki, Shigeo
Format: Conference Proceeding
Language:English
Subjects:
C-Band
GaN HEMT
Rectifier
Wireless Power Transmission
Online Access:Request full text
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Summary:This paper demonstrates fundamental evaluation results of a C-band rectifier using gallium nitride (GaN) high electron mobility transistor (HEMT). To achieve rectification at high power range, the GaN HEMT is utilized. TGF2023-2-05 of Qorvo is used for the HEMT. A rectifier circuit is designed on a RO4350B substrate. Only fundamental wave matching is considered. The designed rectifier is fabricated and measured. Maximum rectification efficiency of 44.8 % at 5.78 GHz while the load resistance is 20\Omega is obtained from the measurement. Maximum output DC power is 9661 mW when RF input power is 44.2dBm.
ISSN:2573-7651
DOI:10.1109/WPTC45513.2019.9055692