A universal method for calculating and extracting the LF and RF noise behavior of nonlinear devices

In this paper an efficient method for calculating the noise behavior of active devices is described. This method offers a general solution for a large variety of transistor and other devices. The method can easily be implemented in any extraction and simulation software and allows determination of L...

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Bibliographic Details
Main Authors: Follmann, R., Berben, J., Kother, D., Waldow, P., Borkes, J., Wolff, I.
Format: Conference Proceeding
Language:English
Subjects:
Active noise reduction
Circuit noise
Circuit simulation
Equations
Equivalent circuits
FETs
Low-frequency noise
Noise measurement
Radio frequency
Voltage
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Description
Summary:In this paper an efficient method for calculating the noise behavior of active devices is described. This method offers a general solution for a large variety of transistor and other devices. The method can easily be implemented in any extraction and simulation software and allows determination of LF as well as RF noise behavior. The functionality is demonstrated on a nonlinear FET model. Furthermore, verifications with HP series IV/ADS are given for different devices.
ISSN:1064-7775
2379-5638
DOI:10.1109/GAAS.2000.906420