Temperature dependence of the carrier capture mechanism in InAs quantum dots

Summary form only given. Photoluminescence emission from InAs quantum dots in a strained In/sub 0.15/Ga/sub 0.85/As quantum well grown on GaAs has been investigated over a temperature range from 10 to 300 K. Emission has been obtained by pumping the sample with a 815 nm radiation from a Ti-doped sap...

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Bibliographic Details
Main Authors: Popescu, D.P., Stintz, A., Liu, G.T., Malloy, K.J.
Format: Conference Proceeding
Language:English
Subjects:
Gallium arsenide
Laser excitation
Photoluminescence
Pump lasers
Quantum dot lasers
Quantum dots
Quantum well lasers
Radiative recombination
Temperature dependence
Temperature distribution
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Summary:Summary form only given. Photoluminescence emission from InAs quantum dots in a strained In/sub 0.15/Ga/sub 0.85/As quantum well grown on GaAs has been investigated over a temperature range from 10 to 300 K. Emission has been obtained by pumping the sample with a 815 nm radiation from a Ti-doped sapphire laser with low intensity such that the electron-hole pairs generated occupy less than 5% of the number of quantum dots. For these pumping conditions recombination emission has not been observed from either the GaAs substrate and cap or from the In/sub 0.15/Ga/sub 0.85/As quantum well.
DOI:10.1109/CLEO.2000.907123