Temperature Effect on ZnGexSn1-xN2/GaN Multiwell Quantum Solar Cells

In this paper, w e are interested in the simulation and modeling of ZnGe x Sn 1-x N 2 /GaN quantum wells (QWs) solar cell, according to many studies before the solar cells always are sensitive to the temperature, for this case, the effect of the temperature on photovoltaic characteristics such as po...

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Bibliographic Details
Main Authors: Laidouci, Abdelmoumene, Aissat, Abdelkader, Vilcot, Jean Pierre
Format: Conference Proceeding
Language:English
Subjects:
New Materials
Quantum Wells
Solar Cell
Online Access:Request full text
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Summary:In this paper, w e are interested in the simulation and modeling of ZnGe x Sn 1-x N 2 /GaN quantum wells (QWs) solar cell, according to many studies before the solar cells always are sensitive to the temperature, for this case, the effect of the temperature on photovoltaic characteristics such as power density-voltage P(V), current density-voltage I(V), and the external quantum efficiency EQE are investigated. The most parameter affected by the changing in the temperature is the open circuit voltage Voc. for optimization. It has been found at 280 K the cell gives better results of open circuit voltage and conversion efficiency their values are 2.18 V and 2.75% respectively.
ISSN:2380-7393
DOI:10.1109/IRSEC48032.2019.9078284