Monte-Carlo simulation of photocarrier dynamics; THz-pulse and second-harmonic generation from semiconductor surface

Summary form only given. The dynamics of intensively studied second-harmonic (SH) generation and THz-pulse radiation from semiconductor surface excited by an ultrashort laser pulse is also fundamentally governed by the photocarrier-induced depletion field screening caused by charge-separation effect...

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Bibliographic Details
Main Author: Malevich, V.L.
Format: Conference Proceeding
Language:English
Subjects:
Boltzmann equation
Electrons
Laser excitation
Numerical simulation
Optical pulse generation
Optical pulses
Poisson equations
Radiative recombination
Semiconductor lasers
Surface emitting lasers
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Summary:Summary form only given. The dynamics of intensively studied second-harmonic (SH) generation and THz-pulse radiation from semiconductor surface excited by an ultrashort laser pulse is also fundamentally governed by the photocarrier-induced depletion field screening caused by charge-separation effect. The spatio-temporal evolution of the surface depletion electric field and photocarrier dynamics at n-GaAs surface excited by subpicosecond laser pulse (photon energy 1.5 eV) have been investigated self-consistently on the basis of a numerical simulation of the Boltzmann transport equation for electrons and Poisson equation for one-dimensional depletion field. The hole drift and recombination were put out of account on the considered time scale. The transport equation has been solved by using Monte-Carlo (MC) method.
DOI:10.1109/IQEC.2000.908099