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A 22-ng/ \surd Hz 17-mW Capacitive MEMS Accelerometer With Electrically Separated Mass Structure and Digital Noise- Reduction Techniques
A fully integrated micro-electromechanical system (MEMS) accelerometer with extremely low noise level (22 ng/ \surd Hz) and sufficiently low power consumption (17 mW) for emerging applications (such as infrastructure monitoring and next-generation oil and gas exploration) was developed. By applying...
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Published in: | IEEE journal of solid-state circuits 2020-09, Vol.55 (9), p.2539-2552 |
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container_end_page | 2552 |
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container_title | IEEE journal of solid-state circuits |
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creator | Furubayashi, Yuki Oshima, Takashi Yamawaki, Taizo Watanabe, Keiki Mori, Keijiro Mori, Naoki Matsumoto, Akira Kamada, Yudai Isobe, Atsushi Sekiguchi, Tomonori |
description | A fully integrated micro-electromechanical system (MEMS) accelerometer with extremely low noise level (22 ng/ \surd Hz) and sufficiently low power consumption (17 mW) for emerging applications (such as infrastructure monitoring and next-generation oil and gas exploration) was developed. By applying concurrent operations of detection and control (enabled by a unique MEMS element) and reducing servo-signal leakage and noise caused by an interaction of 1-bit quantization and asymmetric mass deformation in the digital domain, a ninefold-lower noise level is achieved in comparison with state-of-the-art low-noise low-power MEMS accelerometers. The MEMS element was fabricated on 6-in Si/SOI/Si bonding wafers, while the detection and driver integrated circuits were fabricated as interface circuits with the standard 0.13- \mu \text{m} complementary metal-oxide-semiconductor (CMOS) process and the high-voltage 0.35- \mu \text{m} CMOS process, respectively. The power consumption of the developed MEMS accelerometer is 17 mW from 1.4-, 1.8-, and 12-V supplies, and it has an input range of ±0.55 g and bandwidth of 400 Hz. |
doi_str_mv | 10.1109/JSSC.2020.2991533 |
format | article |
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By applying concurrent operations of detection and control (enabled by a unique MEMS element) and reducing servo-signal leakage and noise caused by an interaction of 1-bit quantization and asymmetric mass deformation in the digital domain, a ninefold-lower noise level is achieved in comparison with state-of-the-art low-noise low-power MEMS accelerometers. The MEMS element was fabricated on 6-in Si/SOI/Si bonding wafers, while the detection and driver integrated circuits were fabricated as interface circuits with the standard 0.13-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> complementary metal-oxide-semiconductor (CMOS) process and the high-voltage 0.35-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> CMOS process, respectively. The power consumption of the developed MEMS accelerometer is 17 mW from 1.4-, 1.8-, and 12-V supplies, and it has an input range of ±0.55 g and bandwidth of 400 Hz.]]></description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/JSSC.2020.2991533</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>IEEE</publisher><subject>Accelerometer ; Accelerometers ; Capacitance ; Capacitors ; closed loop ; Electrodes ; Force ; force rebalance ; mechanical resonance ; micro-electromechanical systems (MEMS) ; Micromechanical devices ; noise reduction ; quantization noise ; Servosystems</subject><ispartof>IEEE journal of solid-state circuits, 2020-09, Vol.55 (9), p.2539-2552</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1104-e1b0c35ad54a7a1f8fc15c6a17c38f8d45dd7d429651254d67a777869f38f30c3</citedby><cites>FETCH-LOGICAL-c1104-e1b0c35ad54a7a1f8fc15c6a17c38f8d45dd7d429651254d67a777869f38f30c3</cites><orcidid>0000-0002-7094-845X ; 0000-0001-5525-6167 ; 0000-0001-7527-3298 ; 0000-0002-2075-0496 ; 0000-0002-1069-3221</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9093904$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Furubayashi, Yuki</creatorcontrib><creatorcontrib>Oshima, Takashi</creatorcontrib><creatorcontrib>Yamawaki, Taizo</creatorcontrib><creatorcontrib>Watanabe, Keiki</creatorcontrib><creatorcontrib>Mori, Keijiro</creatorcontrib><creatorcontrib>Mori, Naoki</creatorcontrib><creatorcontrib>Matsumoto, Akira</creatorcontrib><creatorcontrib>Kamada, Yudai</creatorcontrib><creatorcontrib>Isobe, Atsushi</creatorcontrib><creatorcontrib>Sekiguchi, Tomonori</creatorcontrib><title>A 22-ng/ \surd Hz 17-mW Capacitive MEMS Accelerometer With Electrically Separated Mass Structure and Digital Noise- Reduction Techniques</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description><![CDATA[A fully integrated micro-electromechanical system (MEMS) accelerometer with extremely low noise level (22 ng/<inline-formula> <tex-math notation="LaTeX">\surd </tex-math></inline-formula>Hz) and sufficiently low power consumption (17 mW) for emerging applications (such as infrastructure monitoring and next-generation oil and gas exploration) was developed. By applying concurrent operations of detection and control (enabled by a unique MEMS element) and reducing servo-signal leakage and noise caused by an interaction of 1-bit quantization and asymmetric mass deformation in the digital domain, a ninefold-lower noise level is achieved in comparison with state-of-the-art low-noise low-power MEMS accelerometers. The MEMS element was fabricated on 6-in Si/SOI/Si bonding wafers, while the detection and driver integrated circuits were fabricated as interface circuits with the standard 0.13-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> complementary metal-oxide-semiconductor (CMOS) process and the high-voltage 0.35-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> CMOS process, respectively. The power consumption of the developed MEMS accelerometer is 17 mW from 1.4-, 1.8-, and 12-V supplies, and it has an input range of ±0.55 g and bandwidth of 400 Hz.]]></description><subject>Accelerometer</subject><subject>Accelerometers</subject><subject>Capacitance</subject><subject>Capacitors</subject><subject>closed loop</subject><subject>Electrodes</subject><subject>Force</subject><subject>force rebalance</subject><subject>mechanical resonance</subject><subject>micro-electromechanical systems (MEMS)</subject><subject>Micromechanical devices</subject><subject>noise reduction</subject><subject>quantization noise</subject><subject>Servosystems</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNo9kNFKwzAUhoMoOKcPIN6cF-iWtE3TXI45nbIp2Mm8EEpMTrdI186kFeYT-Nh2bHh1OPz_d-B8hFwzOmCMyuFjlo0HIQ3pIJSS8Sg6IT3GeRowEb2dkh6lLA1kSOk5ufD-s1vjOGU98juCMAyq1RDefesMTH-AiWCzhLHaKm0b-40wn8wzGGmNJbp6gw06WNpmDZMSdeOsVmW5gwy3yqkGDcyV95A1rtVN6xBUZeDWrmyjSniqrccAXtB0oa0rWKBeV_arRX9JzgpVerw6zj55vZssxtNg9nz_MB7NAt39GQfIPqiOuDI8VkKxIi004zpRTOgoLVITc2OEiUOZcBby2CRCCSHSRBZdHHVon7DDXe1q7x0W-dbZjXK7nNF8rzLfq8z3KvOjyo65OTAWEf_7kspI0jj6A7smb7M</recordid><startdate>202009</startdate><enddate>202009</enddate><creator>Furubayashi, Yuki</creator><creator>Oshima, Takashi</creator><creator>Yamawaki, Taizo</creator><creator>Watanabe, Keiki</creator><creator>Mori, Keijiro</creator><creator>Mori, Naoki</creator><creator>Matsumoto, Akira</creator><creator>Kamada, Yudai</creator><creator>Isobe, Atsushi</creator><creator>Sekiguchi, Tomonori</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-7094-845X</orcidid><orcidid>https://orcid.org/0000-0001-5525-6167</orcidid><orcidid>https://orcid.org/0000-0001-7527-3298</orcidid><orcidid>https://orcid.org/0000-0002-2075-0496</orcidid><orcidid>https://orcid.org/0000-0002-1069-3221</orcidid></search><sort><creationdate>202009</creationdate><title>A 22-ng/ \surd Hz 17-mW Capacitive MEMS Accelerometer With Electrically Separated Mass Structure and Digital Noise- Reduction Techniques</title><author>Furubayashi, Yuki ; Oshima, Takashi ; Yamawaki, Taizo ; Watanabe, Keiki ; Mori, Keijiro ; Mori, Naoki ; Matsumoto, Akira ; Kamada, Yudai ; Isobe, Atsushi ; Sekiguchi, Tomonori</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1104-e1b0c35ad54a7a1f8fc15c6a17c38f8d45dd7d429651254d67a777869f38f30c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Accelerometer</topic><topic>Accelerometers</topic><topic>Capacitance</topic><topic>Capacitors</topic><topic>closed loop</topic><topic>Electrodes</topic><topic>Force</topic><topic>force rebalance</topic><topic>mechanical resonance</topic><topic>micro-electromechanical systems (MEMS)</topic><topic>Micromechanical devices</topic><topic>noise reduction</topic><topic>quantization noise</topic><topic>Servosystems</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Furubayashi, Yuki</creatorcontrib><creatorcontrib>Oshima, Takashi</creatorcontrib><creatorcontrib>Yamawaki, Taizo</creatorcontrib><creatorcontrib>Watanabe, Keiki</creatorcontrib><creatorcontrib>Mori, Keijiro</creatorcontrib><creatorcontrib>Mori, Naoki</creatorcontrib><creatorcontrib>Matsumoto, Akira</creatorcontrib><creatorcontrib>Kamada, Yudai</creatorcontrib><creatorcontrib>Isobe, Atsushi</creatorcontrib><creatorcontrib>Sekiguchi, Tomonori</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore</collection><collection>CrossRef</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Furubayashi, Yuki</au><au>Oshima, Takashi</au><au>Yamawaki, Taizo</au><au>Watanabe, Keiki</au><au>Mori, Keijiro</au><au>Mori, Naoki</au><au>Matsumoto, Akira</au><au>Kamada, Yudai</au><au>Isobe, Atsushi</au><au>Sekiguchi, Tomonori</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A 22-ng/ \surd Hz 17-mW Capacitive MEMS Accelerometer With Electrically Separated Mass Structure and Digital Noise- Reduction Techniques</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>2020-09</date><risdate>2020</risdate><volume>55</volume><issue>9</issue><spage>2539</spage><epage>2552</epage><pages>2539-2552</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract><![CDATA[A fully integrated micro-electromechanical system (MEMS) accelerometer with extremely low noise level (22 ng/<inline-formula> <tex-math notation="LaTeX">\surd </tex-math></inline-formula>Hz) and sufficiently low power consumption (17 mW) for emerging applications (such as infrastructure monitoring and next-generation oil and gas exploration) was developed. By applying concurrent operations of detection and control (enabled by a unique MEMS element) and reducing servo-signal leakage and noise caused by an interaction of 1-bit quantization and asymmetric mass deformation in the digital domain, a ninefold-lower noise level is achieved in comparison with state-of-the-art low-noise low-power MEMS accelerometers. The MEMS element was fabricated on 6-in Si/SOI/Si bonding wafers, while the detection and driver integrated circuits were fabricated as interface circuits with the standard 0.13-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> complementary metal-oxide-semiconductor (CMOS) process and the high-voltage 0.35-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> CMOS process, respectively. The power consumption of the developed MEMS accelerometer is 17 mW from 1.4-, 1.8-, and 12-V supplies, and it has an input range of ±0.55 g and bandwidth of 400 Hz.]]></abstract><pub>IEEE</pub><doi>10.1109/JSSC.2020.2991533</doi><tpages>14</tpages><orcidid>https://orcid.org/0000-0002-7094-845X</orcidid><orcidid>https://orcid.org/0000-0001-5525-6167</orcidid><orcidid>https://orcid.org/0000-0001-7527-3298</orcidid><orcidid>https://orcid.org/0000-0002-2075-0496</orcidid><orcidid>https://orcid.org/0000-0002-1069-3221</orcidid></addata></record> |
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subjects | Accelerometer Accelerometers Capacitance Capacitors closed loop Electrodes Force force rebalance mechanical resonance micro-electromechanical systems (MEMS) Micromechanical devices noise reduction quantization noise Servosystems |
title | A 22-ng/ \surd Hz 17-mW Capacitive MEMS Accelerometer With Electrically Separated Mass Structure and Digital Noise- Reduction Techniques |
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