SiC power diodes provide breakthrough performance for a wide range of applications

The electrical performance of silicon carbide (SiC) power diodes is evaluated and compared to that of commercially available silicon (Si) diodes in the voltage range from 600 V through 5000 V. The comparisons include the on-state characteristics, the reverse recovery characteristics, and power conve...

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Bibliographic Details
Published in:IEEE transactions on power electronics 2001-03, Vol.16 (2), p.273-280
Main Authors: Hefner, A.R., Singh, R., Jih-Sheg Lai, Berning, D.W., Bouche, S., Chapuy, C.
Format: Article
Language:English
Subjects:
Breakdown voltage
Diodes
Doping
Electric breakdown
Electric potential
Electric power generation
Electromagnetic interference
Electronics
Energy efficiency
NIST
Power converters
Power supply
Rectifiers
Schottky diodes
Semiconductor diodes
Silicon
Silicon carbide
Switching
Temperature
Voltage
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Summary:The electrical performance of silicon carbide (SiC) power diodes is evaluated and compared to that of commercially available silicon (Si) diodes in the voltage range from 600 V through 5000 V. The comparisons include the on-state characteristics, the reverse recovery characteristics, and power converter efficiency and electromagnetic interference (EMI). It is shown that a newly developed 1500-V SiC merged PiN Schottky (MPS) diode has significant performance advantages over Si diodes optimized for various voltages in the range of 600 V through 1500 V. It is also shown that a newly developed 5000 V SiC PiN diode has significant performance advantages over Si diodes optimized for various voltages in the range of 2000 V through 5000 V. In a test case power converter, replacing the best 600 V Si diodes available with the 1500 V SiC MPS diode results in an increase of power supply efficiency from 82% to 88% for switching at 186 kHz, and a reduction in EMI emissions.
ISSN:0885-8993
1941-0107
DOI:10.1109/63.911152