Island-Style Monolithic Three-Dimensional CMOS-Nanoelectromechanical Logic Circuits

Island-style monolithic three-dimensional (M3D) CMOS- nanoelectromechanical (CMOS-NEM) reconfigurable logic (RL) circuits are experimentally demonstrated showing the full operation of the island-style RL: single-tile and tile-to-tile operation. For the fabrication of M3D CMOS-NEM RL circuits, 65-nm...

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Bibliographic Details
Published in:IEEE electron device letters 2020-08, Vol.41 (8), p.1257-1260
Main Authors: Kwon, Hyug Su, Ko, Ji Wang, Choi, Woo Young
Format: Article
Language:English
Subjects:
CMOS
field programmable gate array (FPGA)
Field programmable gate arrays
Logic circuits
Logic functions
Logic gates
monolithic three-dimensional (M3D) integration
nanoelectromechanical (NEM) memory switch
Nanoelectromechanical systems
Power consumption
Power demand
Relays
RL circuits
Silicon
Switches
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Summary:Island-style monolithic three-dimensional (M3D) CMOS- nanoelectromechanical (CMOS-NEM) reconfigurable logic (RL) circuits are experimentally demonstrated showing the full operation of the island-style RL: single-tile and tile-to-tile operation. For the fabrication of M3D CMOS-NEM RL circuits, 65-nm CMOS baseline process was used, in which copper NEM memory switches are integrated over the CMOS logic circuits by using dual damascene process. It is predicted that our proposed M3D CMOS-NEM RL circuits will exhibit 4.6 \times higher chip density, 2.3 \times higher operation frequency and 9.3 \times lower power consumption than CMOS-only ones (tri-state buffer case) for tile-to-tile operation.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2020.3001362