Analysis of GaN Converter Circuit Stability Influenced by Current Collapse Effect

GaN transistors allow to design highly efficient and high power density converters due to their low conduction and switching losses. However, their very fast switching and low gate threshold voltage make them prone to gate instability issues. Furthermore, they suffer from current collapse issue that...

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Bibliographic Details
Main Authors: Videt, Arnaud, Li, Ke, Idir, Nadir, Evans, Paul, Johnson, Mark
Format: Conference Proceeding
Language:English
Subjects:
Circuit stability
commutation
current collapse
double-pulse test
GaN HEMT
gate instability
Logic gates
Performance evaluation
Reliability engineering
Switches
Switching loss
Threshold voltage
trapping
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Summary:GaN transistors allow to design highly efficient and high power density converters due to their low conduction and switching losses. However, their very fast switching and low gate threshold voltage make them prone to gate instability issues. Furthermore, they suffer from current collapse issue that is notably known to impair on-state resistance, but other effects may be expected. This paper focuses on commutation behaviour and shows how current collapse also impacts the circuit stability by altering immunity to gate oscillations. Consequently, it is shown that the conventional double-pulse test (DPT) may not provide reliable assessment of the switching cell design. Theoretical analysis is carried out and a modified DPT test bench is proposed to evaluate the influence of current collapse on GaN converter circuit stability. The analysis is validated by experimental results based on the modified DPT setup.
ISSN:2470-6647
DOI:10.1109/APEC39645.2020.9124351