A Robust Approach for Characterization of Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter

This paper presents a robust and easy-to-implement approach to measure junction temperature of SiC power devices using quasi-threshold voltage as temperature sensitive electrical parameter with adjustable temperature sensitivity. Static and dynamic measurements were performed and compared on a comme...

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Bibliographic Details
Main Authors: Sharma, Kanuj, Dayanand, Deepak, Munoz Baron, Kevin, Ruthardt, Johannes, Munzenmayer, Florian, Huckelheim, Jan, Kallfass, Ingmar
Format: Conference Proceeding
Language:English
Subjects:
Current measurement
junction temperature
Junctions
Power measurement
power semiconductor
Semiconductor device measurement
Sensitivity
Silicon carbide
Silicon Carbide (SiC)
Temperature measurement
temperature sensitive electrical parameter (TSEP)
Temperature sensors
thermal management
Threshold voltage
Voltage measurement
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Summary:This paper presents a robust and easy-to-implement approach to measure junction temperature of SiC power devices using quasi-threshold voltage as temperature sensitive electrical parameter with adjustable temperature sensitivity. Static and dynamic measurements were performed and compared on a commercially available 1.2 kV/120 A SiC power module. The voltage drop across the parasitic inductor is used as the trigger for the data acquisition circuit. A robust approach by using a D-flip-flop for latching in data acquisition circuit while keeping fast turn-on behavior and low noise susceptibility in consideration with the option of variable sensitivity has been successfully implemented and presented.
ISSN:2470-6647
DOI:10.1109/APEC39645.2020.9124609