A Reliability Overview of Intel's 10+ Logic Technology

We provide a comprehensive overview of the reliability characteristics of Intel's 10+ logic technology. This is a 10 nm technology featuring the third generation of Intel's FinFETs, seventh generation of strained silicon, fifth generation of high-k metal gate, multi-Vt options, contact ove...

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Main Authors: Grover, R., Acosta, T., AnDyke, C., Armagan, E., Auth, C., Chugh, S., Downes, K., Hattendorf, M., Jack, N., Joshi, S., Kasim, R., Leatherman, G., Lee, S.-H., Lin, C.-Y., Madhavan, A., Mao, H., Lowrie, A., Martin, G., McPherson, G., Nayak, P., Neale, A., Nminibapiel, D., Orr, B., Palmer, J., Pelto, C., Poon, S. S., Post, I., Pramanik, T., Rahman, A., Ramey, S., Seifert, N., Sethi, K., Schmitz, A., Wu, H., Yeoh, A.
Format: Conference Proceeding
Language:English
Subjects:
cobalt interconnects
finFET
Logic gates
Manufacturing
MIM capacitor
MIM capacitors
Monitoring
Pb-free packaging
Reliability
Routing
Silicon
thick metal
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Summary:We provide a comprehensive overview of the reliability characteristics of Intel's 10+ logic technology. This is a 10 nm technology featuring the third generation of Intel's FinFETs, seventh generation of strained silicon, fifth generation of high-k metal gate, multi-Vt options, contact over active gate, single-gate isolation, 14 metal layers, low-k inter-layer dielectric, multi-plate metal-insulator-metal capacitors, two thick-metal routing layers for low-resistance power routing, and lead-free packaging. The technology meets all relevant reliability metrics for certification.
ISSN:1938-1891
DOI:10.1109/IRPS45951.2020.9128345