Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory

The 3D double layer Ω-type FETs with ferroelectric HfZrO 2 gate served for one-transistor (1T) architecture is demonstrated and studied for memory reliability. The high endurance is presented more than 10 6 cycles P/E with 4V. Multi-domain model integrated with TCAD is proposed by adding a coupling...

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Main Authors: Chen, K.-T., Lo, C., Lin, Y.-Y., Chueh, C.-Y., Chang, C., Siang, G.-Y., Tseng, Y.-J., Yang, Y.-J., Hsieh, F.-C., Chang, S.-H., Liang, H., Chiang, S.-H., Liu, J.-H., Lin, Y.-D., Yeh, P.-C., Wang, C.-Y., Yang, H.-Y., Tzeng, P.-J., Liao, M.-H., Chang, S. T., Tseng, Y.-Y., Lee, M. H.
Format: Conference Proceeding
Language:English
Subjects:
Ferroelectric
Field effect transistors
Gaussian distribution
HfZrO 2
Ions
Logic gates
Memory architecture
Omega
Solid modeling
Three-dimensional displays
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Summary:The 3D double layer Ω-type FETs with ferroelectric HfZrO 2 gate served for one-transistor (1T) architecture is demonstrated and studied for memory reliability. The high endurance is presented more than 10 6 cycles P/E with 4V. Multi-domain model integrated with TCAD is proposed by adding a coupling coefficient for the polarization gradient term of the free energy, and calculating for nanosheet GAA-FETs. The polarization orientation is assigned randomly by Gaussian distribution into individual domain for multi-dimensional 3D device simulation. The data retention is degraded due to depolarization field occurrence at the corner by modeling results. The feasible structure paves the candidate for emerging memory applications.
ISSN:1938-1891
DOI:10.1109/IRPS45951.2020.9129088