At-Speed Defect Localization by Combining Laser Scanning Microscopy and Power Spectrum Analysis

The defect detection capabilities of Power Spectrum Analysis (PSA) [1] have been successfully combined with local laser heating to isolate defective circuitry in a high-speed Si Phase Locked Loop (PLL). The defective operation resulted in missed counts when operating at multi-GHz speeds and elevated...

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Bibliographic Details
Main Authors: Miller, Mary A., Cole, Edward I., Kraus, Garth M., Robertson, Perry J.
Format: Conference Proceeding
Language:English
Subjects:
functional failure
LADA
Location awareness
missing count
Phase locked loops
Power lasers
PSA
Reliability
SDL
Si PLL
Silicon
Temperature measurement
Temperature sensors
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Summary:The defect detection capabilities of Power Spectrum Analysis (PSA) [1] have been successfully combined with local laser heating to isolate defective circuitry in a high-speed Si Phase Locked Loop (PLL). The defective operation resulted in missed counts when operating at multi-GHz speeds and elevated temperatures. By monitoring PSA signals at a specific frequency through zero-spanning and scanning the suspect device with a heating laser (1340 nm wavelength), the area(s) causing failure were localized. PSA circumvents the need for a rapid pass/fail detector like that used for Soft Defect Localization (SDL) [2] or Laser-Assisted Defect Analysis (LADA) [3] and converts the at-speed failure to a DC signature. The experimental setup for image acquisition and examples demonstrating utility are described.
ISSN:1938-1891
DOI:10.1109/IRPS45951.2020.9129560