Deposition temperature dependent properties of MOCVD grown polycrystalline CuGaSe/sub 2/ thin films and solar cells

Metal organic vapour deposition (MOCVD) was employed to deposit polycrystalline CuGaSe/sub 2/ films and solar cells on glass. Deposition temperature was varied between 570/spl deg/C and 450/spl deg/C. Continuous CuGaSe/sub 2/ films were obtained at a deposition temperature of 450/spl deg/C. Even at...

Full description

Saved in:
Bibliographic Details
Main Authors: Fiedeler, U., Bauknecht, A., Gerhard, A., Albert, J., Lux-Steiner, M.C., Siebentritt, S.
Format: Conference Proceeding
Language:English
Subjects:
Chemical vapor deposition
Glass
MOCVD
Photoluminescence
Photonic band gap
Photovoltaic cells
Photovoltaic systems
Solar power generation
Temperature dependence
Thick films
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Metal organic vapour deposition (MOCVD) was employed to deposit polycrystalline CuGaSe/sub 2/ films and solar cells on glass. Deposition temperature was varied between 570/spl deg/C and 450/spl deg/C. Continuous CuGaSe/sub 2/ films were obtained at a deposition temperature of 450/spl deg/C. Even at this low deposition temperatures the photoluminescence (PL) of the films is dominated by near band gap emission. Depending on the composition the PL spectra are dominated by different donor acceptor pair transitions. Solar cells are processed from these 400 nm thick films and the compositional dependence of the photovoltaic parameters is discussed, especially the increase of the open circuit voltage up to 821 mV under 100 mW/cm/sup 2/ AM1.5 with increasing Ga content.
ISSN:0160-8371
DOI:10.1109/PVSC.2000.915921