Numerical modeling and simulation of constant photocurrent method on a-Si p-i-n junction structure

We present modeling and simulation of the constant photocurrent method (CPM) measurements on a single p-i-n junction a-Si:H solar cell. Two types of D-states with Gaussian distribution were introduced for describing subbandgap absorption, originating from the electron transition from the D-states to...

Full description

Saved in:
Bibliographic Details
Main Authors: Chang Hyun Lee, Sang Soo Kim, Keong Su Lim
Format: Conference Proceeding
Language:English
Subjects:
Absorption
Current measurement
Electrons
Equations
Gaussian distribution
Numerical models
Numerical simulation
Photoconductivity
Photovoltaic cells
PIN photodiodes
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We present modeling and simulation of the constant photocurrent method (CPM) measurements on a single p-i-n junction a-Si:H solar cell. Two types of D-states with Gaussian distribution were introduced for describing subbandgap absorption, originating from the electron transition from the D-states to the conduction band. The subbandgap absorption spectra obtained by CPM measurements on p-i-n a-Si:H solar cells are given by solving Poission's equation, continuity equation, and current equation simultaneously. The effect of D-state characteristics on the subbandgap absorption coefficient spectra of p-i-n a-Si:H solar cells is investigated systematically.
ISSN:0160-8371
DOI:10.1109/PVSC.2000.916038