Next-generation, high-efficiency III-V multijunction solar cells

Next-generation solar cell approaches such as AlGaInP/GaAs/GaInNAs/Ge 4-junction cells, lattice-mismatched GaInP/GaInAs/Ge, concentrator cells, and improved 3-junction device structures hold the promise of greater efficiency than even today's highly successful multijunction cells. Wide-bandgap...

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Main Authors: King, R.R., Karam, N.H., Ermer, J.H., Haddad, N., Colter, P., Isshiki, T., Yoon, H., Cotal, H.L., Joslin, D.E., Krut, D.D., Sudharsanan, R., Edmondson, K., Cavicchi, B.T., Lillington, D.R.
Format: Conference Proceeding
Language:English
Subjects:
Crystallization
Electromagnetic wave absorption
Epitaxial layers
Gallium arsenide
III-V semiconductor materials
Photovoltaic cells
Radiative recombination
Sun
Voltage
X-ray diffraction
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Summary:Next-generation solar cell approaches such as AlGaInP/GaAs/GaInNAs/Ge 4-junction cells, lattice-mismatched GaInP/GaInAs/Ge, concentrator cells, and improved 3-junction device structures hold the promise of greater efficiency than even today's highly successful multijunction cells. Wide-bandgap tunnel junctions, improved heterointerfaces, and other device structure improvements have resulted in several record-efficiency GaInP/GaAs/Ge cell results. Triple-junction (3J) cells grown in this work have demonstrated 29.3% efficiency for space (AMO, 1 sun). Space concentrator 3J cells have efficiency up to 30.0% at low concentration (AMO, 7.6 suns), and terrestrial concentrator cells grown at Spectrolab and processed at NREL have reached 32.3% (AM1.5D, 440 suns).
ISSN:0160-8371
DOI:10.1109/PVSC.2000.916054