Growth, processing and characterization of 0.55-eV n/p/n monolithic interconnected modules

This paper describes recent efforts on the growth, processing and characterization of 0.55 eV InGaAs n/p/n monolithic interconnected modules (MIMs) for thermophotovoltaic energy conversion. Novel compositional grading schemes, improved cell architectures and a variety of interconnect schemes have be...

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Main Authors: Murray, C.S., Fatemi, N., Stan, M., Wemsman, B., Wehrer, R.J.
Format: Conference Proceeding
Language:English
Subjects:
DH-HEMTs
Energy conversion
Etching
Indium gallium arsenide
Indium phosphide
Lattices
Optical buffering
Optical design
Optical devices
Optical interconnections
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creator Murray, C.S.
Fatemi, N.
Stan, M.
Wemsman, B.
Wehrer, R.J.
description This paper describes recent efforts on the growth, processing and characterization of 0.55 eV InGaAs n/p/n monolithic interconnected modules (MIMs) for thermophotovoltaic energy conversion. Novel compositional grading schemes, improved cell architectures and a variety of interconnect schemes have been investigated in order to maximize device power density and efficiency. Recent work has focused on the investigation of various cell interconnect strategies to optimize efficiency and recuperation without sacrificing electrical performance. The electrical and optical results of this study are presented herein.
doi_str_mv 10.1109/PVSC.2000.916113
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ispartof Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036), 2000, p.1238-1241
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects DH-HEMTs
Energy conversion
Etching
Indium gallium arsenide
Indium phosphide
Lattices
Optical buffering
Optical design
Optical devices
Optical interconnections
title Growth, processing and characterization of 0.55-eV n/p/n monolithic interconnected modules
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