Irradiance-dependence and translation of the I-V characteristics of crystalline silicon solar cells

The current-voltage characteristics I/sub out/(V) of crystalline silicon (c-Si) solar cells are experimentally investigated at various irradiance E. Its dependence on E can be well approximated by the sum of a dark current and a voltage-dependent "photocurrent", which is proportional to E....

Full description

Saved in:
Bibliographic Details
Main Authors: Hishikawa, Y., Imura, Y., Oshiro, T.
Format: Conference Proceeding
Language:English
Subjects:
Amorphous silicon
Cadmium compounds
Crystallization
Current-voltage characteristics
Dark current
Equations
Photovoltaic cells
Quality assurance
Semiconductor thin films
Voltage
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The current-voltage characteristics I/sub out/(V) of crystalline silicon (c-Si) solar cells are experimentally investigated at various irradiance E. Its dependence on E can be well approximated by the sum of a dark current and a voltage-dependent "photocurrent", which is proportional to E. These results are used to develop translation equations. It is demonstrated that the resulting formula is able to calculate the I/sub out/(V) of c-Si solar cells at any E from experimental I/sub out/(V) at two different Es, with comparable or better accuracy than the conventional procedure based on the shifted approximation. The present procedure is straightforward, and does not require correction for the series resistance. The same procedure is valid for various solar cells including a-Si, thin-film crystalline silicon, and CdTe.
ISSN:0160-8371
DOI:10.1109/PVSC.2000.916169