Analysis and Design Considerations of Low-voltage Trench MOSFET for Inductive Load Switching Applications

the paper summarizes both analytical and numerical considerations as well as experimental data of low voltage (50 V) trench MOSFET in unclamped (UIS) and self-clamped (SCIS) inductive switching applications. The herein presented data summarize failure mechanisms that ultimately limit UIS / SCIS rati...

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Bibliographic Details
Main Authors: Spetik, Radim, Fujiwara, Shuji, Ho, Ihsiu, Hao, Jifa, Arora, Aakash, Blaho, Matej, Seliga, Ladislav, Malousek, Roman, Kudrna, Filip, Menon, Santosh, Greenwood, B., Thomason, M., Williams, B.
Format: Conference Proceeding
Language:English
Subjects:
Failure analysis
inductive switching clamped / unclamped
Integrated circuits
Low voltage
MOSFET
Power semiconductor devices
Switches
thermal runaway
Trench MOSFET
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Summary:the paper summarizes both analytical and numerical considerations as well as experimental data of low voltage (50 V) trench MOSFET in unclamped (UIS) and self-clamped (SCIS) inductive switching applications. The herein presented data summarize failure mechanisms that ultimately limit UIS / SCIS rating of a device once all other design factors are exploited.
ISSN:1946-0201
DOI:10.1109/ISPSD46842.2020.9170095