Analysis and Design Considerations of Low-voltage Trench MOSFET for Inductive Load Switching Applications

the paper summarizes both analytical and numerical considerations as well as experimental data of low voltage (50 V) trench MOSFET in unclamped (UIS) and self-clamped (SCIS) inductive switching applications. The herein presented data summarize failure mechanisms that ultimately limit UIS / SCIS rati...

Full description

Saved in:
Bibliographic Details
Main Authors: Spetik, Radim, Fujiwara, Shuji, Ho, Ihsiu, Hao, Jifa, Arora, Aakash, Blaho, Matej, Seliga, Ladislav, Malousek, Roman, Kudrna, Filip, Menon, Santosh, Greenwood, B., Thomason, M., Williams, B.
Format: Conference Proceeding
Language:English
Subjects:
Failure analysis
inductive switching clamped / unclamped
Integrated circuits
Low voltage
MOSFET
Power semiconductor devices
Switches
thermal runaway
Trench MOSFET
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 560
container_issue
container_start_page 557
container_title
container_volume
creator Spetik, Radim
Fujiwara, Shuji
Ho, Ihsiu
Hao, Jifa
Arora, Aakash
Blaho, Matej
Seliga, Ladislav
Malousek, Roman
Kudrna, Filip
Menon, Santosh
Greenwood, B.
Thomason, M.
Williams, B.
description the paper summarizes both analytical and numerical considerations as well as experimental data of low voltage (50 V) trench MOSFET in unclamped (UIS) and self-clamped (SCIS) inductive switching applications. The herein presented data summarize failure mechanisms that ultimately limit UIS / SCIS rating of a device once all other design factors are exploited.
doi_str_mv 10.1109/ISPSD46842.2020.9170095
format conference_proceeding
fullrecord <record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_9170095</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9170095</ieee_id><sourcerecordid>9170095</sourcerecordid><originalsourceid>FETCH-LOGICAL-i203t-c1358d6662dba897d785f50ba52ee17fb2d4c4b37a425bedfb2dca5118fc93f33</originalsourceid><addsrcrecordid>eNotkNtOAjEYhKuJiYg8gRf2BRb797yXBDyQYDBZvCbdHqBm7ZLtiuHtXQNXM5l8MxeD0COQKQApn5bVR7XgUnM6pYSSaQmKkFJcoUmpNCiqgWsm5TUaQcllMSBwi-5y_iJEMBAwQnGWTHPKMWOTHF74HHcJz9uUo_Od6ePgcBvwqv0tjm3Tm53Hm84nu8fv6-rleYND2-Flcj-2j0c_cMbh6jf2dh_TDs8Ohyba88w9ugmmyX5y0TH6HPrzt2K1fl3OZ6siUsL6wgIT2kkpqauNLpVTWgRBaiOo96BCTR23vGbKcCpq7_4DawSADrZkgbExejjvRu_99tDFb9Odtpdn2B9WmVoo</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Analysis and Design Considerations of Low-voltage Trench MOSFET for Inductive Load Switching Applications</title><source>IEEE Xplore All Conference Series</source><creator>Spetik, Radim ; Fujiwara, Shuji ; Ho, Ihsiu ; Hao, Jifa ; Arora, Aakash ; Blaho, Matej ; Seliga, Ladislav ; Malousek, Roman ; Kudrna, Filip ; Menon, Santosh ; Greenwood, B. ; Thomason, M. ; Williams, B.</creator><creatorcontrib>Spetik, Radim ; Fujiwara, Shuji ; Ho, Ihsiu ; Hao, Jifa ; Arora, Aakash ; Blaho, Matej ; Seliga, Ladislav ; Malousek, Roman ; Kudrna, Filip ; Menon, Santosh ; Greenwood, B. ; Thomason, M. ; Williams, B.</creatorcontrib><description>the paper summarizes both analytical and numerical considerations as well as experimental data of low voltage (50 V) trench MOSFET in unclamped (UIS) and self-clamped (SCIS) inductive switching applications. The herein presented data summarize failure mechanisms that ultimately limit UIS / SCIS rating of a device once all other design factors are exploited.</description><identifier>EISSN: 1946-0201</identifier><identifier>EISBN: 9781728148366</identifier><identifier>EISBN: 1728148367</identifier><identifier>DOI: 10.1109/ISPSD46842.2020.9170095</identifier><language>eng</language><publisher>IEEE</publisher><subject>Failure analysis ; inductive switching clamped / unclamped ; Integrated circuits ; Low voltage ; MOSFET ; Power semiconductor devices ; Switches ; thermal runaway ; Trench MOSFET</subject><ispartof>2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.557-560</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9170095$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,27925,54555,54932</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9170095$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Spetik, Radim</creatorcontrib><creatorcontrib>Fujiwara, Shuji</creatorcontrib><creatorcontrib>Ho, Ihsiu</creatorcontrib><creatorcontrib>Hao, Jifa</creatorcontrib><creatorcontrib>Arora, Aakash</creatorcontrib><creatorcontrib>Blaho, Matej</creatorcontrib><creatorcontrib>Seliga, Ladislav</creatorcontrib><creatorcontrib>Malousek, Roman</creatorcontrib><creatorcontrib>Kudrna, Filip</creatorcontrib><creatorcontrib>Menon, Santosh</creatorcontrib><creatorcontrib>Greenwood, B.</creatorcontrib><creatorcontrib>Thomason, M.</creatorcontrib><creatorcontrib>Williams, B.</creatorcontrib><title>Analysis and Design Considerations of Low-voltage Trench MOSFET for Inductive Load Switching Applications</title><title>2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)</title><addtitle>ISPSD</addtitle><description>the paper summarizes both analytical and numerical considerations as well as experimental data of low voltage (50 V) trench MOSFET in unclamped (UIS) and self-clamped (SCIS) inductive switching applications. The herein presented data summarize failure mechanisms that ultimately limit UIS / SCIS rating of a device once all other design factors are exploited.</description><subject>Failure analysis</subject><subject>inductive switching clamped / unclamped</subject><subject>Integrated circuits</subject><subject>Low voltage</subject><subject>MOSFET</subject><subject>Power semiconductor devices</subject><subject>Switches</subject><subject>thermal runaway</subject><subject>Trench MOSFET</subject><issn>1946-0201</issn><isbn>9781728148366</isbn><isbn>1728148367</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2020</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotkNtOAjEYhKuJiYg8gRf2BRb797yXBDyQYDBZvCbdHqBm7ZLtiuHtXQNXM5l8MxeD0COQKQApn5bVR7XgUnM6pYSSaQmKkFJcoUmpNCiqgWsm5TUaQcllMSBwi-5y_iJEMBAwQnGWTHPKMWOTHF74HHcJz9uUo_Od6ePgcBvwqv0tjm3Tm53Hm84nu8fv6-rleYND2-Flcj-2j0c_cMbh6jf2dh_TDs8Ohyba88w9ugmmyX5y0TH6HPrzt2K1fl3OZ6siUsL6wgIT2kkpqauNLpVTWgRBaiOo96BCTR23vGbKcCpq7_4DawSADrZkgbExejjvRu_99tDFb9Odtpdn2B9WmVoo</recordid><startdate>202009</startdate><enddate>202009</enddate><creator>Spetik, Radim</creator><creator>Fujiwara, Shuji</creator><creator>Ho, Ihsiu</creator><creator>Hao, Jifa</creator><creator>Arora, Aakash</creator><creator>Blaho, Matej</creator><creator>Seliga, Ladislav</creator><creator>Malousek, Roman</creator><creator>Kudrna, Filip</creator><creator>Menon, Santosh</creator><creator>Greenwood, B.</creator><creator>Thomason, M.</creator><creator>Williams, B.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>202009</creationdate><title>Analysis and Design Considerations of Low-voltage Trench MOSFET for Inductive Load Switching Applications</title><author>Spetik, Radim ; Fujiwara, Shuji ; Ho, Ihsiu ; Hao, Jifa ; Arora, Aakash ; Blaho, Matej ; Seliga, Ladislav ; Malousek, Roman ; Kudrna, Filip ; Menon, Santosh ; Greenwood, B. ; Thomason, M. ; Williams, B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i203t-c1358d6662dba897d785f50ba52ee17fb2d4c4b37a425bedfb2dca5118fc93f33</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Failure analysis</topic><topic>inductive switching clamped / unclamped</topic><topic>Integrated circuits</topic><topic>Low voltage</topic><topic>MOSFET</topic><topic>Power semiconductor devices</topic><topic>Switches</topic><topic>thermal runaway</topic><topic>Trench MOSFET</topic><toplevel>online_resources</toplevel><creatorcontrib>Spetik, Radim</creatorcontrib><creatorcontrib>Fujiwara, Shuji</creatorcontrib><creatorcontrib>Ho, Ihsiu</creatorcontrib><creatorcontrib>Hao, Jifa</creatorcontrib><creatorcontrib>Arora, Aakash</creatorcontrib><creatorcontrib>Blaho, Matej</creatorcontrib><creatorcontrib>Seliga, Ladislav</creatorcontrib><creatorcontrib>Malousek, Roman</creatorcontrib><creatorcontrib>Kudrna, Filip</creatorcontrib><creatorcontrib>Menon, Santosh</creatorcontrib><creatorcontrib>Greenwood, B.</creatorcontrib><creatorcontrib>Thomason, M.</creatorcontrib><creatorcontrib>Williams, B.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Spetik, Radim</au><au>Fujiwara, Shuji</au><au>Ho, Ihsiu</au><au>Hao, Jifa</au><au>Arora, Aakash</au><au>Blaho, Matej</au><au>Seliga, Ladislav</au><au>Malousek, Roman</au><au>Kudrna, Filip</au><au>Menon, Santosh</au><au>Greenwood, B.</au><au>Thomason, M.</au><au>Williams, B.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Analysis and Design Considerations of Low-voltage Trench MOSFET for Inductive Load Switching Applications</atitle><btitle>2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)</btitle><stitle>ISPSD</stitle><date>2020-09</date><risdate>2020</risdate><spage>557</spage><epage>560</epage><pages>557-560</pages><eissn>1946-0201</eissn><eisbn>9781728148366</eisbn><eisbn>1728148367</eisbn><abstract>the paper summarizes both analytical and numerical considerations as well as experimental data of low voltage (50 V) trench MOSFET in unclamped (UIS) and self-clamped (SCIS) inductive switching applications. The herein presented data summarize failure mechanisms that ultimately limit UIS / SCIS rating of a device once all other design factors are exploited.</abstract><pub>IEEE</pub><doi>10.1109/ISPSD46842.2020.9170095</doi><tpages>4</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier EISSN: 1946-0201
ispartof 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.557-560
issn 1946-0201
language eng
recordid cdi_ieee_primary_9170095
source IEEE Xplore All Conference Series
subjects Failure analysis
inductive switching clamped / unclamped
Integrated circuits
Low voltage
MOSFET
Power semiconductor devices
Switches
thermal runaway
Trench MOSFET
title Analysis and Design Considerations of Low-voltage Trench MOSFET for Inductive Load Switching Applications
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T16%3A18%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Analysis%20and%20Design%20Considerations%20of%20Low-voltage%20Trench%20MOSFET%20for%20Inductive%20Load%20Switching%20Applications&rft.btitle=2020%2032nd%20International%20Symposium%20on%20Power%20Semiconductor%20Devices%20and%20ICs%20(ISPSD)&rft.au=Spetik,%20Radim&rft.date=2020-09&rft.spage=557&rft.epage=560&rft.pages=557-560&rft.eissn=1946-0201&rft_id=info:doi/10.1109/ISPSD46842.2020.9170095&rft.eisbn=9781728148366&rft.eisbn_list=1728148367&rft_dat=%3Cieee_CHZPO%3E9170095%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i203t-c1358d6662dba897d785f50ba52ee17fb2d4c4b37a425bedfb2dca5118fc93f33%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=9170095&rfr_iscdi=true